ON THE DOPING DEPENDENCE OF OXIDATION-INDUCED STACKING FAULT SHRINKAGE IN SILICON.

THE EFFECT OF DOPANT CONCENTRATION ON THE SHRINKAGE OF OXIDATION-INDUCED STACKING FAULTS (OSF) IN SILICON DURING N//2 ANNEALING HAS BEEN CONTROVERSIAL. IN THIS WORK, THE AUTHORS DEMONSTRATE THAT OSF SHRINKAGE DURING N//2 ANNEALING CAN BE ENHANCED BY THE PRESENCE OF RELATIVELY SHALLOW PHOSPHORUS-IMPLANTED LAYERS. THE SHRINKAGE RATE SHOWS A DOPING DEPENDENCE THAT IS CONSISTENT WITH VACANCY ABSORPTION THAT INCREASES WITH DOPING. HOWEVER, AT INTRINSIC DOPING CONCENTRATIONS IT ISARGUED THAT THE FAULTS SHRINK BY EMITTING SELF INTERSTITIALS.

Duke Scholars

Author Richard B. Fair Electrical and Computer Engineering