EFFECT OF STRAIN-INDUCED BAND-GAP NARROWING ON E-CENTRE CONCENTRATIONS IN Si.
Publication
, Journal Article
Fair, RB
Published in: Institute of Physics Conference Series
December 1, 1979
A strain effect has been found to explain the anomalous reduction of phosphorus diffusivity in Si at surface concentrations greater than about 4 multiplied by 10**2**0 cm** minus **3. It is shown that band-gap narrowing results in reduce P diffusivity throught a relative reduction of (PV)** minus pairs in the surface region.
Duke Scholars
Published In
Institute of Physics Conference Series
ISSN
0951-3248
Publication Date
December 1, 1979
Issue
46
Citation
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ICMJE
MLA
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Fair, R. B. (1979). EFFECT OF STRAIN-INDUCED BAND-GAP NARROWING ON E-CENTRE CONCENTRATIONS IN Si. Institute of Physics Conference Series, (46).
Fair, R. B. “EFFECT OF STRAIN-INDUCED BAND-GAP NARROWING ON E-CENTRE CONCENTRATIONS IN Si.” Institute of Physics Conference Series, no. 46 (December 1, 1979).
Fair RB. EFFECT OF STRAIN-INDUCED BAND-GAP NARROWING ON E-CENTRE CONCENTRATIONS IN Si. Institute of Physics Conference Series. 1979 Dec 1;(46).
Fair, R. B. “EFFECT OF STRAIN-INDUCED BAND-GAP NARROWING ON E-CENTRE CONCENTRATIONS IN Si.” Institute of Physics Conference Series, no. 46, Dec. 1979.
Fair RB. EFFECT OF STRAIN-INDUCED BAND-GAP NARROWING ON E-CENTRE CONCENTRATIONS IN Si. Institute of Physics Conference Series. 1979 Dec 1;(46).
Published In
Institute of Physics Conference Series
ISSN
0951-3248
Publication Date
December 1, 1979
Issue
46