ZENER AND AVALANCHE BREAKDOWN IN As-IMPLANTED, LOW-VOLTAGE Si N-P JUNCTIONS.
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, Journal Article
Fair, RB; Wivell, HW
Published in: undefined
January 1, 1975
Implanted-diffused As layers in Si have been well-characterized, and have been used in fabricating low-voltage n-p junctions. It is shown that these As layers form linearly-graded junctions with a uniform B-doped background. The grade constant of the As profile at the junction is known sufficiently well as a function of As dose, diffusion time and temperature to allow quantitative use of existing tunneling and quantitative use of existing tunneling and avalanche theories for the calculation of the reverse I-V curves. Calculated curves are presented which correlate As implant dose and diffusion with junction breakdown voltage, breakdown impedance and temperature coefficients of reverse voltage.
Duke Scholars
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undefined
DOI
Publication Date
January 1, 1975
Start / End Page
455 / 458
Citation
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Fair, R. B., & Wivell, H. W. (1975). ZENER AND AVALANCHE BREAKDOWN IN As-IMPLANTED, LOW-VOLTAGE Si N-P JUNCTIONS. Undefined, 455–458. https://doi.org/10.1109/iedm.1975.188921
Fair, R. B., and H. W. Wivell. “ZENER AND AVALANCHE BREAKDOWN IN As-IMPLANTED, LOW-VOLTAGE Si N-P JUNCTIONS.” Undefined, January 1, 1975, 455–58. https://doi.org/10.1109/iedm.1975.188921.
Fair RB, Wivell HW. ZENER AND AVALANCHE BREAKDOWN IN As-IMPLANTED, LOW-VOLTAGE Si N-P JUNCTIONS. undefined. 1975 Jan 1;455–8.
Fair, R. B., and H. W. Wivell. “ZENER AND AVALANCHE BREAKDOWN IN As-IMPLANTED, LOW-VOLTAGE Si N-P JUNCTIONS.” Undefined, Jan. 1975, pp. 455–58. Scopus, doi:10.1109/iedm.1975.188921.
Fair RB, Wivell HW. ZENER AND AVALANCHE BREAKDOWN IN As-IMPLANTED, LOW-VOLTAGE Si N-P JUNCTIONS. undefined. 1975 Jan 1;455–458.
Published In
undefined
DOI
Publication Date
January 1, 1975
Start / End Page
455 / 458