OPTIMUM LOW-LEVEL INJECTION EFFICIENCY OF SILICON TRANSISTORS WITH SHALLOW ARSENIC EMITTERS.
Publication
, Journal Article
Fair, RB
Published in: IEEE Transactions on Electron Devices
1973
It is the purpose of this paper to present the results of an investigation of the optimization of beta // gamma with respect to the As emitter surface concentration C//S//E. The theoretical model that will be used to explain the dependence of beta // gamma on C//S//E is based upon the decreasing bandgap theories of Kauffmann and Bergh and DeMan. Experimental measurements of DELTA E//g as a function of C//S//E for As in Si are presented, and this results is incorporated into the theory. Results are analyzed in detail.
Duke Scholars
Published In
IEEE Transactions on Electron Devices
Publication Date
1973
Volume
ED-20
Issue
7
Start / End Page
642 / 647
Related Subject Headings
- Applied Physics
- 0906 Electrical and Electronic Engineering
Citation
APA
Chicago
ICMJE
MLA
NLM
Fair, R. B. (1973). OPTIMUM LOW-LEVEL INJECTION EFFICIENCY OF SILICON TRANSISTORS WITH SHALLOW ARSENIC EMITTERS. IEEE Transactions on Electron Devices, ED-20(7), 642–647.
Fair, R. B. “OPTIMUM LOW-LEVEL INJECTION EFFICIENCY OF SILICON TRANSISTORS WITH SHALLOW ARSENIC EMITTERS.” IEEE Transactions on Electron Devices ED-20, no. 7 (1973): 642–47.
Fair RB. OPTIMUM LOW-LEVEL INJECTION EFFICIENCY OF SILICON TRANSISTORS WITH SHALLOW ARSENIC EMITTERS. IEEE Transactions on Electron Devices. 1973;ED-20(7):642–7.
Fair, R. B. “OPTIMUM LOW-LEVEL INJECTION EFFICIENCY OF SILICON TRANSISTORS WITH SHALLOW ARSENIC EMITTERS.” IEEE Transactions on Electron Devices, vol. ED-20, no. 7, 1973, pp. 642–47.
Fair RB. OPTIMUM LOW-LEVEL INJECTION EFFICIENCY OF SILICON TRANSISTORS WITH SHALLOW ARSENIC EMITTERS. IEEE Transactions on Electron Devices. 1973;ED-20(7):642–647.
Published In
IEEE Transactions on Electron Devices
Publication Date
1973
Volume
ED-20
Issue
7
Start / End Page
642 / 647
Related Subject Headings
- Applied Physics
- 0906 Electrical and Electronic Engineering