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Erratum: Profile estimation of high-concentration arsenic diffusion in silicon (Journal of Applied Physics (1972) 43, (1278))

Publication ,  Journal Article
Fair, RB
Published in: Journal of Applied Physics
December 1, 1973
Published version (DOI)

Duke Scholars

Richard B. Fair
Author Richard B. Fair Electrical and Computer Engineering

Published In

Journal of Applied Physics

DOI

10.1063/1.1661938

ISSN

0021-8979

Publication Date

December 1, 1973

Volume

44

Issue

1

Start / End Page

536

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences
 

Citation

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MLA
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Fair, R. B. (1973). Erratum: Profile estimation of high-concentration arsenic diffusion in silicon (Journal of Applied Physics (1972) 43, (1278)). Journal of Applied Physics, 44(1), 536. https://doi.org/10.1063/1.1661938
Fair, R. B. “Erratum: Profile estimation of high-concentration arsenic diffusion in silicon (Journal of Applied Physics (1972) 43, (1278)).” Journal of Applied Physics 44, no. 1 (December 1, 1973): 536. https://doi.org/10.1063/1.1661938.
Fair, R. B. “Erratum: Profile estimation of high-concentration arsenic diffusion in silicon (Journal of Applied Physics (1972) 43, (1278)).” Journal of Applied Physics, vol. 44, no. 1, Dec. 1973, p. 536. Scopus, doi:10.1063/1.1661938.
Journal cover image

Published In

Journal of Applied Physics

DOI

10.1063/1.1661938

ISSN

0021-8979

Publication Date

December 1, 1973

Volume

44

Issue

1

Start / End Page

536

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences