Scholars@Duke publication: Diffusion-limited etching of p-GaAs in NaOHNa<inf>2</inf>EDTA solutions

Diffusion-limited etching of p-GaAs in NaOHNa2EDTA solutions

Publication , Journal Article

Chen, CY; Reichert, W; Cohen, RM

Published in: Materials Letters

January 1, 1994

Mass-transport-limited etching of p-type GaAs using sodium hydroxide (NaOH) and disodium ethylenediamine tetraacetate (Na2EDTA) has been studied. Isotropic etching of (100)-oriented p-type GaAs was obtained for pH values between 8 and 13, and uniform etch rates were obtained over 0.05-0.25 μm/min with an unstirred solution. Etching cycles consisted of anodic oxidation for 20-40 s followed by oxide removal when the potential was set just negative of the rest potential for 5-10 s. The diffusion-limited currents were found to be relatively insensitive both to changes in oxidizing voltage and to variations in the hole concentration in the GaAs. Etching in the mass-transport limited regime was found to be a convenient and useful approach when profiling the GaAs hole concentration with electrochemical capacitance-voltage measurements. © 1994.

Duke Scholars

Author William M. Reichert Biomedical Engineering

Published In

Materials Letters

DOI

10.1016/0167-577X(94)90052-3

ISSN

0167-577X

Publication Date

January 1, 1994

Volume

Issue

3-4

Start / End Page

109 / 113

Related Subject Headings

Materials
51 Physical sciences
40 Engineering
34 Chemical sciences
09 Engineering
03 Chemical Sciences
02 Physical Sciences

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NLM

Chen, C. Y., Reichert, W., & Cohen, R. M. (1994). Diffusion-limited etching of p-GaAs in NaOHNa2EDTA solutions. Materials Letters, 19(3–4), 109–113. https://doi.org/10.1016/0167-577X(94)90052-3

Chen, C. Y., W. Reichert, and R. M. Cohen. “Diffusion-limited etching of p-GaAs in NaOHNa2EDTA solutions.” Materials Letters 19, no. 3–4 (January 1, 1994): 109–13. https://doi.org/10.1016/0167-577X(94)90052-3.

Chen CY, Reichert W, Cohen RM. Diffusion-limited etching of p-GaAs in NaOHNa2EDTA solutions. Materials Letters. 1994 Jan 1;19(3–4):109–13.

Chen, C. Y., et al. “Diffusion-limited etching of p-GaAs in NaOHNa2EDTA solutions.” Materials Letters, vol. 19, no. 3–4, Jan. 1994, pp. 109–13. Scopus, doi:10.1016/0167-577X(94)90052-3.

Chen CY, Reichert W, Cohen RM. Diffusion-limited etching of p-GaAs in NaOHNa2EDTA solutions. Materials Letters. 1994 Jan 1;19(3–4):109–113.

Published In

Materials Letters

DOI

10.1016/0167-577X(94)90052-3

ISSN

0167-577X

Publication Date

January 1, 1994

Volume

Issue

3-4

Start / End Page

109 / 113

Related Subject Headings

Materials
51 Physical sciences
40 Engineering
34 Chemical sciences
09 Engineering
03 Chemical Sciences
02 Physical Sciences