Diffusion-limited etching of p-GaAs in NaOHNa2 EDTA solutions
Mass-transport-limited etching of p-type GaAs using sodium hydroxide (NaOH) and disodium ethylenediamine tetraacetate (Na2EDTA) has been studied. Isotropic etching of (100)-oriented p-type GaAs was obtained for pH values between 8 and 13, and uniform etch rates were obtained over 0.05-0.25 μm/min with an unstirred solution. Etching cycles consisted of anodic oxidation for 20-40 s followed by oxide removal when the potential was set just negative of the rest potential for 5-10 s. The diffusion-limited currents were found to be relatively insensitive both to changes in oxidizing voltage and to variations in the hole concentration in the GaAs. Etching in the mass-transport limited regime was found to be a convenient and useful approach when profiling the GaAs hole concentration with electrochemical capacitance-voltage measurements. © 1994.
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Citation
Published In
DOI
ISSN
Publication Date
Volume
Issue
Start / End Page
Related Subject Headings
- Materials
- 51 Physical sciences
- 40 Engineering
- 34 Chemical sciences
- 09 Engineering
- 03 Chemical Sciences
- 02 Physical Sciences