Void formation and inhibition of layer intermixing in ion-impIanted GaAs/AlGaAs superlattices
Publication
, Journal Article
Chen, S; Lee, ST; Braunstein, G; Tan, TY
Published in: Applied Physics Letters
December 1, 1989
Voids have been found in the near-surface region of GaAs/AlGaAs superlattices in a transmission electron microscopy study. The superlattices were Si- or Al-implanted and subsequently either furnace or rapid thermally annealed. Concurrent with the presence of voids is an inhibition of superlattice layer intermixing enhancement in the near-surface region. This inhibition does not occur in the deeper region of the samples where voids are not found. The voids can form via condensation of the Ga and As vacancies produced by the implantation process. We suggest that voids can depress dopant activation, suppress dopant diffusion, and inhibit the superlattice layer intermixing enhancement.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1989
Volume
55
Issue
12
Start / End Page
1194 / 1196
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
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MLA
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Chen, S., Lee, S. T., Braunstein, G., & Tan, T. Y. (1989). Void formation and inhibition of layer intermixing in ion-impIanted GaAs/AlGaAs superlattices. Applied Physics Letters, 55(12), 1194–1196. https://doi.org/10.1063/1.101653
Chen, S., S. T. Lee, G. Braunstein, and T. Y. Tan. “Void formation and inhibition of layer intermixing in ion-impIanted GaAs/AlGaAs superlattices.” Applied Physics Letters 55, no. 12 (December 1, 1989): 1194–96. https://doi.org/10.1063/1.101653.
Chen S, Lee ST, Braunstein G, Tan TY. Void formation and inhibition of layer intermixing in ion-impIanted GaAs/AlGaAs superlattices. Applied Physics Letters. 1989 Dec 1;55(12):1194–6.
Chen, S., et al. “Void formation and inhibition of layer intermixing in ion-impIanted GaAs/AlGaAs superlattices.” Applied Physics Letters, vol. 55, no. 12, Dec. 1989, pp. 1194–96. Scopus, doi:10.1063/1.101653.
Chen S, Lee ST, Braunstein G, Tan TY. Void formation and inhibition of layer intermixing in ion-impIanted GaAs/AlGaAs superlattices. Applied Physics Letters. 1989 Dec 1;55(12):1194–1196.
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1989
Volume
55
Issue
12
Start / End Page
1194 / 1196
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences