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Order-disorder transition in single-crystal silicon induced by pulsed uv laser irradiation

Publication ,  Journal Article
Tsu, R; Hodgson, RT; Tan, TY; Baglin, JE
Published in: Physical Review Letters
January 1, 1979

Single-crystal silicon samples have been made disordered by irradiation with pulses from a frequency-quadrupled neodynium-doped-yttrium-aluminum-garnet laser with 10-8-s pulse length. We have studied the resulting amorphous layer by transmission electron microscopy and He-ion backscattering. Irradiation with longer-wavelength pulses restored the disordered layer to its original crystalline state. This order-disorder laser-radiation-induced transition is repeatable. © 1979 The American Physical Society.

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Published In

Physical Review Letters

DOI

ISSN

0031-9007

Publication Date

January 1, 1979

Volume

42

Issue

20

Start / End Page

1356 / 1358

Related Subject Headings

  • General Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences
 

Citation

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Tsu, R., Hodgson, R. T., Tan, T. Y., & Baglin, J. E. (1979). Order-disorder transition in single-crystal silicon induced by pulsed uv laser irradiation. Physical Review Letters, 42(20), 1356–1358. https://doi.org/10.1103/PhysRevLett.42.1356
Tsu, R., R. T. Hodgson, T. Y. Tan, and J. E. Baglin. “Order-disorder transition in single-crystal silicon induced by pulsed uv laser irradiation.” Physical Review Letters 42, no. 20 (January 1, 1979): 1356–58. https://doi.org/10.1103/PhysRevLett.42.1356.
Tsu R, Hodgson RT, Tan TY, Baglin JE. Order-disorder transition in single-crystal silicon induced by pulsed uv laser irradiation. Physical Review Letters. 1979 Jan 1;42(20):1356–8.
Tsu, R., et al. “Order-disorder transition in single-crystal silicon induced by pulsed uv laser irradiation.” Physical Review Letters, vol. 42, no. 20, Jan. 1979, pp. 1356–58. Scopus, doi:10.1103/PhysRevLett.42.1356.
Tsu R, Hodgson RT, Tan TY, Baglin JE. Order-disorder transition in single-crystal silicon induced by pulsed uv laser irradiation. Physical Review Letters. 1979 Jan 1;42(20):1356–1358.

Published In

Physical Review Letters

DOI

ISSN

0031-9007

Publication Date

January 1, 1979

Volume

42

Issue

20

Start / End Page

1356 / 1358

Related Subject Headings

  • General Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences