Alignment tolerant InP/Si CMOS hybrid integrated photoreceivers operating at 0.9 Gbps
Publication
, Journal Article
Vrazel, M; Chang, JJ; Brooke, M; Jokerst, NM; Dagnall, G; Brown, A
Published in: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
December 1, 2000
An overview is given on the hybrid integration of a thin film large area, low capacitance InGaAsP/InP inverted metal-semiconductor-metal photodetector onto a Si CMOS differential receiver circuit. The integrated receiver has a measured bit-error-rate (BER) of 10-10 at 0.9 Gbps and 10-11 at 650 Mbps.
Duke Scholars
Published In
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
ISSN
1092-8081
Publication Date
December 1, 2000
Volume
2
Start / End Page
884 / 885
Citation
APA
Chicago
ICMJE
MLA
NLM
Vrazel, M., Chang, J. J., Brooke, M., Jokerst, N. M., Dagnall, G., & Brown, A. (2000). Alignment tolerant InP/Si CMOS hybrid integrated photoreceivers operating at 0.9 Gbps. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2, 884–885.
Published In
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
ISSN
1092-8081
Publication Date
December 1, 2000
Volume
2
Start / End Page
884 / 885