Kinetics of gallium adlayer adsorption/desorption on polar and nonpolar GaN surfaces
Publication
, Journal Article
Choi, S; Kim, TH; Everitt, HO; Brown, A; Losurdo, M; Bruno, G; Moto, A
Published in: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
June 11, 2007
Spectroscopic ellipsometry installed on a GEN-II plasma assisted molecular beam epitaxy machine has been shown to be an effective in situ real time tool for monitoring the kinetics of gallium adlayer adsorption/desorption on the GaN surface. In this work, the authors present data on the study of Ga adsorption/desorption on polar c -plane GaN (0001) and nonpolar m -plane GaN (1-100) surfaces for Ga beam equivalent pressures in the range of 8.96× 10-8 -1.86× 10-7 Torr, Ga pulses in the range of 5-360 s, and for substrate temperatures between 650 and 750 °C. © 2007 American Vacuum Society.
Duke Scholars
Published In
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
DOI
ISSN
1071-1023
Publication Date
June 11, 2007
Volume
25
Issue
3
Start / End Page
969 / 973
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 4016 Materials engineering
- 0912 Materials Engineering
- 0901 Aerospace Engineering
- 0401 Atmospheric Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Choi, S., Kim, T. H., Everitt, H. O., Brown, A., Losurdo, M., Bruno, G., & Moto, A. (2007). Kinetics of gallium adlayer adsorption/desorption on polar and nonpolar GaN surfaces. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 25(3), 969–973. https://doi.org/10.1116/1.2720856
Choi, S., T. H. Kim, H. O. Everitt, A. Brown, M. Losurdo, G. Bruno, and A. Moto. “Kinetics of gallium adlayer adsorption/desorption on polar and nonpolar GaN surfaces.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 25, no. 3 (June 11, 2007): 969–73. https://doi.org/10.1116/1.2720856.
Choi S, Kim TH, Everitt HO, Brown A, Losurdo M, Bruno G, et al. Kinetics of gallium adlayer adsorption/desorption on polar and nonpolar GaN surfaces. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2007 Jun 11;25(3):969–73.
Choi, S., et al. “Kinetics of gallium adlayer adsorption/desorption on polar and nonpolar GaN surfaces.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 25, no. 3, June 2007, pp. 969–73. Scopus, doi:10.1116/1.2720856.
Choi S, Kim TH, Everitt HO, Brown A, Losurdo M, Bruno G, Moto A. Kinetics of gallium adlayer adsorption/desorption on polar and nonpolar GaN surfaces. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2007 Jun 11;25(3):969–973.
Published In
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
DOI
ISSN
1071-1023
Publication Date
June 11, 2007
Volume
25
Issue
3
Start / End Page
969 / 973
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 4016 Materials engineering
- 0912 Materials Engineering
- 0901 Aerospace Engineering
- 0401 Atmospheric Sciences