Buffer free MOCVD growth of GaN on 4H-SiC: Effect of substrate treatments and UV-photoirradiation
Publication
, Journal Article
Losurdo, M; Giangregorio, MM; Bruno, G; Kim, TH; Choi, S; Brown, A
Published in: Physica Status Solidi (A) Applications and Materials Science
May 1, 2006
GaN has been grown directly on the Si-face 4H-SiC(0001) substrates using remote plasma-assisted metal-organic chemical vapour deposition (RP-MOCVD) with UV-light irradiation. The effects of substrate pre-treatments and UV-photoirradiation of the growth surface on GaN nucleation and film morphology are investigated. Optical data from spectroscopic ellipsometry measurements and morphological data show an improvement in nucleation and material quality with UV-light irradiation. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.
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Published In
Physica Status Solidi (A) Applications and Materials Science
DOI
EISSN
1862-6319
ISSN
1862-6300
Publication Date
May 1, 2006
Volume
203
Issue
7
Start / End Page
1607 / 1611
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 4018 Nanotechnology
- 4016 Materials engineering
- 1007 Nanotechnology
- 0912 Materials Engineering
- 0204 Condensed Matter Physics
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Chicago
ICMJE
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Losurdo, M., Giangregorio, M. M., Bruno, G., Kim, T. H., Choi, S., & Brown, A. (2006). Buffer free MOCVD growth of GaN on 4H-SiC: Effect of substrate treatments and UV-photoirradiation. Physica Status Solidi (A) Applications and Materials Science, 203(7), 1607–1611. https://doi.org/10.1002/pssa.200565154
Losurdo, M., M. M. Giangregorio, G. Bruno, T. H. Kim, S. Choi, and A. Brown. “Buffer free MOCVD growth of GaN on 4H-SiC: Effect of substrate treatments and UV-photoirradiation.” Physica Status Solidi (A) Applications and Materials Science 203, no. 7 (May 1, 2006): 1607–11. https://doi.org/10.1002/pssa.200565154.
Losurdo M, Giangregorio MM, Bruno G, Kim TH, Choi S, Brown A. Buffer free MOCVD growth of GaN on 4H-SiC: Effect of substrate treatments and UV-photoirradiation. Physica Status Solidi (A) Applications and Materials Science. 2006 May 1;203(7):1607–11.
Losurdo, M., et al. “Buffer free MOCVD growth of GaN on 4H-SiC: Effect of substrate treatments and UV-photoirradiation.” Physica Status Solidi (A) Applications and Materials Science, vol. 203, no. 7, May 2006, pp. 1607–11. Scopus, doi:10.1002/pssa.200565154.
Losurdo M, Giangregorio MM, Bruno G, Kim TH, Choi S, Brown A. Buffer free MOCVD growth of GaN on 4H-SiC: Effect of substrate treatments and UV-photoirradiation. Physica Status Solidi (A) Applications and Materials Science. 2006 May 1;203(7):1607–1611.
Published In
Physica Status Solidi (A) Applications and Materials Science
DOI
EISSN
1862-6319
ISSN
1862-6300
Publication Date
May 1, 2006
Volume
203
Issue
7
Start / End Page
1607 / 1611
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 4018 Nanotechnology
- 4016 Materials engineering
- 1007 Nanotechnology
- 0912 Materials Engineering
- 0204 Condensed Matter Physics