Real time spectroscopic ellipsometry investigation of homoepitaxial GaN grown by plasma assisted molecular beam epitaxy
Publication
, Journal Article
Kim, TH; Choi, S; Wu, P; Brown, A; Losurdo, M; Giangregorio, MM; Bruno, G; Moto, A
Published in: Physica Status Solidi (C) Current Topics in Solid State Physics
July 31, 2006
The growth of GaN by plasma assisted molecular beam epitaxy on GaN template substrates (GaN on sapphire) is investigated with in-situ multi-channel spectroscopic ellipsometry. Growth is performed under various Ga/N flux ratios at growth temperatures in the range 710-780°C. The thermal roughening of the GaN template caused by decomposition of the surface is investigated through the temporal variation of the GaN pseudodielectric function over the temperature range of 650°C to 850°C. The structural, morphological, and optical properties are also discussed. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.
Duke Scholars
Published In
Physica Status Solidi (C) Current Topics in Solid State Physics
DOI
ISSN
1862-6351
Publication Date
July 31, 2006
Volume
3
Start / End Page
1583 / 1586
Related Subject Headings
- 5104 Condensed matter physics
- 4016 Materials engineering
- 0912 Materials Engineering
- 0206 Quantum Physics
- 0204 Condensed Matter Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Kim, T. H., Choi, S., Wu, P., Brown, A., Losurdo, M., Giangregorio, M. M., … Moto, A. (2006). Real time spectroscopic ellipsometry investigation of homoepitaxial GaN grown by plasma assisted molecular beam epitaxy. Physica Status Solidi (C) Current Topics in Solid State Physics, 3, 1583–1586. https://doi.org/10.1002/pssc.200565207
Kim, T. H., S. Choi, P. Wu, A. Brown, M. Losurdo, M. M. Giangregorio, G. Bruno, and A. Moto. “Real time spectroscopic ellipsometry investigation of homoepitaxial GaN grown by plasma assisted molecular beam epitaxy.” Physica Status Solidi (C) Current Topics in Solid State Physics 3 (July 31, 2006): 1583–86. https://doi.org/10.1002/pssc.200565207.
Kim TH, Choi S, Wu P, Brown A, Losurdo M, Giangregorio MM, et al. Real time spectroscopic ellipsometry investigation of homoepitaxial GaN grown by plasma assisted molecular beam epitaxy. Physica Status Solidi (C) Current Topics in Solid State Physics. 2006 Jul 31;3:1583–6.
Kim, T. H., et al. “Real time spectroscopic ellipsometry investigation of homoepitaxial GaN grown by plasma assisted molecular beam epitaxy.” Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 3, July 2006, pp. 1583–86. Scopus, doi:10.1002/pssc.200565207.
Kim TH, Choi S, Wu P, Brown A, Losurdo M, Giangregorio MM, Bruno G, Moto A. Real time spectroscopic ellipsometry investigation of homoepitaxial GaN grown by plasma assisted molecular beam epitaxy. Physica Status Solidi (C) Current Topics in Solid State Physics. 2006 Jul 31;3:1583–1586.
Published In
Physica Status Solidi (C) Current Topics in Solid State Physics
DOI
ISSN
1862-6351
Publication Date
July 31, 2006
Volume
3
Start / End Page
1583 / 1586
Related Subject Headings
- 5104 Condensed matter physics
- 4016 Materials engineering
- 0912 Materials Engineering
- 0206 Quantum Physics
- 0204 Condensed Matter Physics