Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks
Publication
, Journal Article
Triplett, G; May, G; Brown, A
Published in: Solid-State Electronics
January 1, 2002
This paper presents experiments that examined the formation of the InAs/AlSb interface in high electron mobility transistor (HEMT) devices grown by molecular beam epitaxy (MBE). At the interface, indium barrier thickness and substrate temperature were varied. Reflection-high-energy-electron-diffraction (RHEED) intensity oscillations of the specular spot were recorded during formation of the interface. Electron mobility models based on growth conditions and RHEED data were developed using neural networks. Our results demonstrate a correlation of the electron mobility with growth conditions and RHEED data. © 2002 Elsevier Science Ltd. All rights reserved.
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Published In
Solid-State Electronics
DOI
ISSN
0038-1101
Publication Date
January 1, 2002
Volume
46
Issue
10
Start / End Page
1519 / 1524
Related Subject Headings
- Applied Physics
- 0906 Electrical and Electronic Engineering
- 0205 Optical Physics
- 0204 Condensed Matter Physics
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Chicago
ICMJE
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Triplett, G., May, G., & Brown, A. (2002). Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks. Solid-State Electronics, 46(10), 1519–1524. https://doi.org/10.1016/S0038-1101(02)00098-9
Triplett, G., G. May, and A. Brown. “Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks.” Solid-State Electronics 46, no. 10 (January 1, 2002): 1519–24. https://doi.org/10.1016/S0038-1101(02)00098-9.
Triplett G, May G, Brown A. Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks. Solid-State Electronics. 2002 Jan 1;46(10):1519–24.
Triplett, G., et al. “Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks.” Solid-State Electronics, vol. 46, no. 10, Jan. 2002, pp. 1519–24. Scopus, doi:10.1016/S0038-1101(02)00098-9.
Triplett G, May G, Brown A. Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks. Solid-State Electronics. 2002 Jan 1;46(10):1519–1524.
Published In
Solid-State Electronics
DOI
ISSN
0038-1101
Publication Date
January 1, 2002
Volume
46
Issue
10
Start / End Page
1519 / 1524
Related Subject Headings
- Applied Physics
- 0906 Electrical and Electronic Engineering
- 0205 Optical Physics
- 0204 Condensed Matter Physics