Anion exchange at the interfaces of mixed anion III-V heterostructures grown by molecular beam epitaxy
Publication
, Journal Article
Brown, T; Brown, A; May, G
Published in: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
July 1, 2002
Anion exchange at the interfaces of mixed anion heterostructures were studied and characterized via high-resolution x-ray diffraction analysis of anion exposed static surfaces. Superlattices were formed primarily due to anion exchange and related processes occurring at the interfaces. Composition profiles of the interfaces for each superlattice were determined using dynamical simulations.
Duke Scholars
Published In
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
DOI
ISSN
1071-1023
Publication Date
July 1, 2002
Volume
20
Issue
4
Start / End Page
1771 / 1776
Related Subject Headings
- Applied Physics
- 0912 Materials Engineering
- 0901 Aerospace Engineering
- 0401 Atmospheric Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Brown, T., Brown, A., & May, G. (2002). Anion exchange at the interfaces of mixed anion III-V heterostructures grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 20(4), 1771–1776. https://doi.org/10.1116/1.1491988
Brown, T., A. Brown, and G. May. “Anion exchange at the interfaces of mixed anion III-V heterostructures grown by molecular beam epitaxy.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 20, no. 4 (July 1, 2002): 1771–76. https://doi.org/10.1116/1.1491988.
Brown T, Brown A, May G. Anion exchange at the interfaces of mixed anion III-V heterostructures grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2002 Jul 1;20(4):1771–6.
Brown, T., et al. “Anion exchange at the interfaces of mixed anion III-V heterostructures grown by molecular beam epitaxy.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 20, no. 4, July 2002, pp. 1771–76. Scopus, doi:10.1116/1.1491988.
Brown T, Brown A, May G. Anion exchange at the interfaces of mixed anion III-V heterostructures grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2002 Jul 1;20(4):1771–1776.
Published In
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
DOI
ISSN
1071-1023
Publication Date
July 1, 2002
Volume
20
Issue
4
Start / End Page
1771 / 1776
Related Subject Headings
- Applied Physics
- 0912 Materials Engineering
- 0901 Aerospace Engineering
- 0401 Atmospheric Sciences