MBE growth of high quality GaN on LiGaO2 for high frequency, high power electronic applications
Lithium gallate is receiving ever increasing attention as a possible candidate for III-nitride material growth due to its superior lattice match. This paper summarizes the recent, promising results from material growths on lithium gallate including aluminum, gallium and indium-nitride alloys. Structural, optical and electrical diagnostics are presented. The use of this material could result in significant advantages for use in power electronic applications. Specifically, the present material quality is in some ways, superior to all other current substrate technologies since very high quality, extremely thin nitride material can be produced. The areas for which lithium gallate still lags other technologies is also discussed. Issues that directly effect electronic devices, such as overcoming the limited thermal conductivity via heat pipes or substrate removal, the possibilities of achieving higher p-type doping and higher indium concentrations through the use of low growth temperatures, obtaining single polarity material with nearly no mosaic spread in grain orientation, along with issues of substrate cost are discussed.
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Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering
- 0205 Optical Physics
- 0204 Condensed Matter Physics
Citation
Published In
DOI
ISSN
Publication Date
Volume
Issue
Start / End Page
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering
- 0205 Optical Physics
- 0204 Condensed Matter Physics