Composite-channel InP HEMT for W-band power amplifiers
Publication
, Journal Article
Chen, YC; Chin, P; Ingram, D; Lai, R; Grundbacher, R; Barsky, M; Block, T; Wojtowicz, M; Tran, L; Medvedev, V; Yen, HC; Streit, DC; Brown, A
Published in: Conference Proceedings - International Conference on Indium Phosphide and Related Materials
January 1, 1999
We have developed composite-channel InP-InGaAs HEMTs for W-band high power amplifier applications. The optimized 0.15 μm T-gate device demonstrated state-of-the-art gm-Imax combination. It also showed a 1.5 V improvement in on-state and off-state breakdown over the conventional InP HEMT without degrading the RF performance. A two-stage MMIC power amplifier built on this device delivered 25 dBm output power with 17 dB linear gain at 94 GHz as measured on wafer. To our knowledge, this is the first demonstration of composite-channel HEMT at 94 GHz with excellent power performance.
Duke Scholars
Published In
Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN
1092-8669
Publication Date
January 1, 1999
Start / End Page
305 / 306
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Chen, Y. C., Chin, P., Ingram, D., Lai, R., Grundbacher, R., Barsky, M., … Brown, A. (1999). Composite-channel InP HEMT for W-band power amplifiers. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 305–306.
Chen, Y. C., P. Chin, D. Ingram, R. Lai, R. Grundbacher, M. Barsky, T. Block, et al. “Composite-channel InP HEMT for W-band power amplifiers.” Conference Proceedings - International Conference on Indium Phosphide and Related Materials, January 1, 1999, 305–6.
Chen YC, Chin P, Ingram D, Lai R, Grundbacher R, Barsky M, et al. Composite-channel InP HEMT for W-band power amplifiers. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 1999 Jan 1;305–6.
Chen, Y. C., et al. “Composite-channel InP HEMT for W-band power amplifiers.” Conference Proceedings - International Conference on Indium Phosphide and Related Materials, Jan. 1999, pp. 305–06.
Chen YC, Chin P, Ingram D, Lai R, Grundbacher R, Barsky M, Block T, Wojtowicz M, Tran L, Medvedev V, Yen HC, Streit DC, Brown A. Composite-channel InP HEMT for W-band power amplifiers. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 1999 Jan 1;305–306.
Published In
Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN
1092-8669
Publication Date
January 1, 1999
Start / End Page
305 / 306