Analysis of GaAs substrate removal etching with citric acid:H 2O 2 and NH 4OH:H 2O 2 for application to compliant substrates
Publication
, Journal Article
Carter-Coman, C; Bicknell-Tassius, R; Benz, RG; Brown, AS; Jokerst, NM
Published in: Journal of the Electrochemical Society
1997
New properties associated with selective substrate removal have been observed in the application of this technique to GaAs thin film compliant substrates. Citric acid- and NH 4OH-based etches are used to selectively etch the GaAs substrate and stop on an AlAs layer. The AlAs stop-etch layer is transformed into a layer that is almost twice as thick as the original layer, mismatched to the remaining GaAs epilayer, and has a refractive index around 2.0. Replacement of the single AlAs stop etch layer with multiple thin AlGaAs stop etch layers is proposed to alleviate this problem.
Duke Scholars
Published In
Journal of the Electrochemical Society
ISSN
0013-4651
Publication Date
1997
Volume
144
Issue
2
Start / End Page
L29 / L31
Related Subject Headings
- Energy
- 0912 Materials Engineering
- 0306 Physical Chemistry (incl. Structural)
- 0303 Macromolecular and Materials Chemistry
Citation
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ICMJE
MLA
NLM
Carter-Coman, C., Bicknell-Tassius, R., Benz, R. G., Brown, A. S., & Jokerst, N. M. (1997). Analysis of GaAs substrate removal etching with citric acid:H 2O 2 and NH 4OH:H 2O 2 for application to compliant substrates. Journal of the Electrochemical Society, 144(2), L29–L31.
Carter-Coman, C., R. Bicknell-Tassius, R. G. Benz, A. S. Brown, and N. M. Jokerst. “Analysis of GaAs substrate removal etching with citric acid:H 2O 2 and NH 4OH:H 2O 2 for application to compliant substrates.” Journal of the Electrochemical Society 144, no. 2 (1997): L29–31.
Carter-Coman C, Bicknell-Tassius R, Benz RG, Brown AS, Jokerst NM. Analysis of GaAs substrate removal etching with citric acid:H 2O 2 and NH 4OH:H 2O 2 for application to compliant substrates. Journal of the Electrochemical Society. 1997;144(2):L29–31.
Carter-Coman, C., et al. “Analysis of GaAs substrate removal etching with citric acid:H 2O 2 and NH 4OH:H 2O 2 for application to compliant substrates.” Journal of the Electrochemical Society, vol. 144, no. 2, 1997, pp. L29–31.
Carter-Coman C, Bicknell-Tassius R, Benz RG, Brown AS, Jokerst NM. Analysis of GaAs substrate removal etching with citric acid:H 2O 2 and NH 4OH:H 2O 2 for application to compliant substrates. Journal of the Electrochemical Society. 1997;144(2):L29–L31.
Published In
Journal of the Electrochemical Society
ISSN
0013-4651
Publication Date
1997
Volume
144
Issue
2
Start / End Page
L29 / L31
Related Subject Headings
- Energy
- 0912 Materials Engineering
- 0306 Physical Chemistry (incl. Structural)
- 0303 Macromolecular and Materials Chemistry