Double heterojunction bipolar transistors with InP epitaxial layers grown by solid-source MBE
Publication
, Journal Article
Cowles, J; Metzger, RA; Gutierrez-Aitken, A; Brown, AS; Streit, D; Oki, A; Kim, T; Doolittle, A
Published in: Conference Proceedings - International Conference on Indium Phosphide and Related Materials
January 1, 1997
InP-based HBTs featuring InP emitters and collectors are compared to those containing InAlAs emitters and InGaAs collectors. The InP emitter HBTs exhibited excellent β and no As-P intermixing. The InP collector HBTs showed two orders of magnitude improvement in the output characteristics. The high early voltage enables high precision analog functions as well as higher voltage operation. Solid source MBE is capable of producing high quality InP/InGaAs heterojunctions using a valved phosphorus cracker.
Duke Scholars
Published In
Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN
1092-8669
Publication Date
January 1, 1997
Start / End Page
548 / 550
Citation
APA
Chicago
ICMJE
MLA
NLM
Cowles, J., Metzger, R. A., Gutierrez-Aitken, A., Brown, A. S., Streit, D., Oki, A., … Doolittle, A. (1997). Double heterojunction bipolar transistors with InP epitaxial layers grown by solid-source MBE. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 548–550.
Cowles, J., R. A. Metzger, A. Gutierrez-Aitken, A. S. Brown, D. Streit, A. Oki, T. Kim, and A. Doolittle. “Double heterojunction bipolar transistors with InP epitaxial layers grown by solid-source MBE.” Conference Proceedings - International Conference on Indium Phosphide and Related Materials, January 1, 1997, 548–50.
Cowles J, Metzger RA, Gutierrez-Aitken A, Brown AS, Streit D, Oki A, et al. Double heterojunction bipolar transistors with InP epitaxial layers grown by solid-source MBE. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 1997 Jan 1;548–50.
Cowles, J., et al. “Double heterojunction bipolar transistors with InP epitaxial layers grown by solid-source MBE.” Conference Proceedings - International Conference on Indium Phosphide and Related Materials, Jan. 1997, pp. 548–50.
Cowles J, Metzger RA, Gutierrez-Aitken A, Brown AS, Streit D, Oki A, Kim T, Doolittle A. Double heterojunction bipolar transistors with InP epitaxial layers grown by solid-source MBE. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 1997 Jan 1;548–550.
Published In
Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN
1092-8669
Publication Date
January 1, 1997
Start / End Page
548 / 550