Fractional quantum Hall effect at low temperatures
Publication
, Journal Article
Chang, AM; Paalanen, MA; Tsui, DC; Störmer, HL; Hwang, JCM
Published in: Physical Review B
January 1, 1983
We report a systematic study of the 23 fractional quantum Hall effect at low temperatures (65-770 mK) for a GaAs-AlxGa1-xAs sample of very high mobility (106 cm2/V sec). We find the 23 Hall plateau to be accurately quantized. The diagonal and Hall resistivities are observed to be activated at each given filling factor ν=nheB around 23. The activation energy has a maximum value, Δmax, at ν=23 and decreases to each side as ν moves away. By varying the sample mobility and density simultaneously with a backgate bias, we find Δmax strongly mobility and magnetic field dependent. © 1983 The American Physical Society.
Duke Scholars
Published In
Physical Review B
DOI
ISSN
0163-1829
Publication Date
January 1, 1983
Volume
28
Issue
10
Start / End Page
6133 / 6136
Citation
APA
Chicago
ICMJE
MLA
NLM
Chang, A. M., Paalanen, M. A., Tsui, D. C., Störmer, H. L., & Hwang, J. C. M. (1983). Fractional quantum Hall effect at low temperatures. Physical Review B, 28(10), 6133–6136. https://doi.org/10.1103/PhysRevB.28.6133
Chang, A. M., M. A. Paalanen, D. C. Tsui, H. L. Störmer, and J. C. M. Hwang. “Fractional quantum Hall effect at low temperatures.” Physical Review B 28, no. 10 (January 1, 1983): 6133–36. https://doi.org/10.1103/PhysRevB.28.6133.
Chang AM, Paalanen MA, Tsui DC, Störmer HL, Hwang JCM. Fractional quantum Hall effect at low temperatures. Physical Review B. 1983 Jan 1;28(10):6133–6.
Chang, A. M., et al. “Fractional quantum Hall effect at low temperatures.” Physical Review B, vol. 28, no. 10, Jan. 1983, pp. 6133–36. Scopus, doi:10.1103/PhysRevB.28.6133.
Chang AM, Paalanen MA, Tsui DC, Störmer HL, Hwang JCM. Fractional quantum Hall effect at low temperatures. Physical Review B. 1983 Jan 1;28(10):6133–6136.
Published In
Physical Review B
DOI
ISSN
0163-1829
Publication Date
January 1, 1983
Volume
28
Issue
10
Start / End Page
6133 / 6136