Very shallow p+-n junction formation by low-energy BF 2+ ion implantation into crystalline and germanium preamorphized silicon

Very low energy (6 keV) BF2⁺ ion implantation has been used to form very shallow (≤1000 Å) junctions in crystalline and Ge⁺ preamorphized Si. Low-temperature furnace annealing was used to regrow the crystal, and rapid thermal annealing was used for dopant activation and radiation damage removal. In preamorphized samples, Ge⁺ implantation parameters were found to have an influence on B diffusion. Our results show that for temperatures higher than 950 °C, B diffusion, rather than B channeling, becomes the dominant mechanism in determining the junction depth. Computer simulations of the profiles show regions of retarded and enhanced B diffusion, which depend on surface and end-of-range damage, respectively.

Duke Scholars

Author Richard B. Fair Electrical and Computer Engineering