Silicon oxidation kinetics in the thin-film regime
Publication
, Journal Article
Massoud, HZ
Published in: Conference on Solid State Devices and Materials
December 1, 1990
The present status of silicon oxidation in the thin-film regime is reviewed with emphasis on experimental results and modeling approaches. The effects of temperature, orientation, and dopant concentration in the substrate on the oxidation kinetics are discussed. The observation of a delay in the onset of oxidation at temperatures in the 800-1000°C range is also presented.
Duke Scholars
Published In
Conference on Solid State Devices and Materials
Publication Date
December 1, 1990
Start / End Page
1083 / 1086
Citation
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Massoud, H. Z. (1990). Silicon oxidation kinetics in the thin-film regime. Conference on Solid State Devices and Materials, 1083–1086.
Massoud, H. Z. “Silicon oxidation kinetics in the thin-film regime.” Conference on Solid State Devices and Materials, December 1, 1990, 1083–86.
Massoud HZ. Silicon oxidation kinetics in the thin-film regime. Conference on Solid State Devices and Materials. 1990 Dec 1;1083–6.
Massoud, H. Z. “Silicon oxidation kinetics in the thin-film regime.” Conference on Solid State Devices and Materials, Dec. 1990, pp. 1083–86.
Massoud HZ. Silicon oxidation kinetics in the thin-film regime. Conference on Solid State Devices and Materials. 1990 Dec 1;1083–1086.
Published In
Conference on Solid State Devices and Materials
Publication Date
December 1, 1990
Start / End Page
1083 / 1086