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Control of dopant incorporation in InAs/GaAs quantum dots for infrared photodetection with low dark current

Publication ,  Journal Article
Stiff-Roberts, AD; Zhao, Z; Yi, C
Published in: Conference on Lasers and Electro Optics and 2006 Quantum Electronics and Laser Science Conference CLEO QELS 2006
December 1, 2006

To reduce dark current in quantum-dot infrared photodetectors, different InAs/GaAs quantum-dot doping conditions, i.e. concentration and modulation- vs. delta-doping, have been investigated by the comparison of temperature-dependent dark current and corresponding activation energies vs. bias. © 2006 Optical Society of America.

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Published In

Conference on Lasers and Electro Optics and 2006 Quantum Electronics and Laser Science Conference CLEO QELS 2006

DOI

Publication Date

December 1, 2006
 

Citation

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Stiff-Roberts, A. D., Zhao, Z., & Yi, C. (2006). Control of dopant incorporation in InAs/GaAs quantum dots for infrared photodetection with low dark current. Conference on Lasers and Electro Optics and 2006 Quantum Electronics and Laser Science Conference CLEO QELS 2006. https://doi.org/10.1109/CLEO.2006.4628283
Stiff-Roberts, A. D., Z. Zhao, and C. Yi. “Control of dopant incorporation in InAs/GaAs quantum dots for infrared photodetection with low dark current.” Conference on Lasers and Electro Optics and 2006 Quantum Electronics and Laser Science Conference CLEO QELS 2006, December 1, 2006. https://doi.org/10.1109/CLEO.2006.4628283.
Stiff-Roberts AD, Zhao Z, Yi C. Control of dopant incorporation in InAs/GaAs quantum dots for infrared photodetection with low dark current. Conference on Lasers and Electro Optics and 2006 Quantum Electronics and Laser Science Conference CLEO QELS 2006. 2006 Dec 1;
Stiff-Roberts, A. D., et al. “Control of dopant incorporation in InAs/GaAs quantum dots for infrared photodetection with low dark current.” Conference on Lasers and Electro Optics and 2006 Quantum Electronics and Laser Science Conference CLEO QELS 2006, Dec. 2006. Scopus, doi:10.1109/CLEO.2006.4628283.
Stiff-Roberts AD, Zhao Z, Yi C. Control of dopant incorporation in InAs/GaAs quantum dots for infrared photodetection with low dark current. Conference on Lasers and Electro Optics and 2006 Quantum Electronics and Laser Science Conference CLEO QELS 2006. 2006 Dec 1;

Published In

Conference on Lasers and Electro Optics and 2006 Quantum Electronics and Laser Science Conference CLEO QELS 2006

DOI

Publication Date

December 1, 2006