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Control of dopant incorporation in InAs/GaAs quantum dots for infrared photodetection with low dark current

Publication ,  Journal Article
Stiff-Roberts, AD; Zhao, Z; Yi, C
Published in: Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
December 1, 2006

To reduce dark current in quantum-dot infrared photodetectors, different InAs/GaAs quantum-dot doping conditions, i.e. concentration and modulation- vs. delta-doping, have been investigated by the comparison of temperature-dependent dark current and corresponding activation energies vs. bias. © 2006 Optical Society of America.

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Published In

Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

DOI

Publication Date

December 1, 2006
 

Citation

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Stiff-Roberts, A. D., Zhao, Z., & Yi, C. (2006). Control of dopant incorporation in InAs/GaAs quantum dots for infrared photodetection with low dark current. Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006. https://doi.org/10.1109/CLEO.2006.4628283
Stiff-Roberts, A. D., Z. Zhao, and C. Yi. “Control of dopant incorporation in InAs/GaAs quantum dots for infrared photodetection with low dark current.” Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006, December 1, 2006. https://doi.org/10.1109/CLEO.2006.4628283.
Stiff-Roberts AD, Zhao Z, Yi C. Control of dopant incorporation in InAs/GaAs quantum dots for infrared photodetection with low dark current. Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006. 2006 Dec 1;
Stiff-Roberts, A. D., et al. “Control of dopant incorporation in InAs/GaAs quantum dots for infrared photodetection with low dark current.” Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006, Dec. 2006. Scopus, doi:10.1109/CLEO.2006.4628283.
Stiff-Roberts AD, Zhao Z, Yi C. Control of dopant incorporation in InAs/GaAs quantum dots for infrared photodetection with low dark current. Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006. 2006 Dec 1;

Published In

Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

DOI

Publication Date

December 1, 2006