Recent progresses in understanding gettering in silicon
Publication
, Journal Article
Tan, TY
Published in: Materials Research Society Symposium - Proceedings
January 1, 2002
For IC fabrications using CZ Si, intrinsic gettering utilizing oxygen precipitation has been extensively studied in the past, with the main efforts concentrated on the engineering and scientific aspects of the creation of gettering sites. The present review, however, will focus on recent progresses on the modeling of processes and mechanisms of the gettering of metallic impurities from the device active regions to the created gettering regions, together with the electrical activity of impurity precipitates.
Duke Scholars
Published In
Materials Research Society Symposium - Proceedings
DOI
ISSN
0272-9172
Publication Date
January 1, 2002
Volume
719
Start / End Page
89 / 100
Citation
APA
Chicago
ICMJE
MLA
NLM
Tan, T. Y. (2002). Recent progresses in understanding gettering in silicon. Materials Research Society Symposium - Proceedings, 719, 89–100. https://doi.org/10.1557/proc-719-f4.1
Tan, T. Y. “Recent progresses in understanding gettering in silicon.” Materials Research Society Symposium - Proceedings 719 (January 1, 2002): 89–100. https://doi.org/10.1557/proc-719-f4.1.
Tan TY. Recent progresses in understanding gettering in silicon. Materials Research Society Symposium - Proceedings. 2002 Jan 1;719:89–100.
Tan, T. Y. “Recent progresses in understanding gettering in silicon.” Materials Research Society Symposium - Proceedings, vol. 719, Jan. 2002, pp. 89–100. Scopus, doi:10.1557/proc-719-f4.1.
Tan TY. Recent progresses in understanding gettering in silicon. Materials Research Society Symposium - Proceedings. 2002 Jan 1;719:89–100.
Published In
Materials Research Society Symposium - Proceedings
DOI
ISSN
0272-9172
Publication Date
January 1, 2002
Volume
719
Start / End Page
89 / 100