Modeling growth directional features of silicon nanowires obtained using SiO
Publication
, Journal Article
Tan, TY; Lee, ST; Gösele, U
Published in: Materials Research Society Symposium - Proceedings
January 1, 2002
Duke Scholars
Published In
Materials Research Society Symposium - Proceedings
DOI
ISSN
0272-9172
Publication Date
January 1, 2002
Volume
719
Start / End Page
235 / 240
Citation
APA
Chicago
ICMJE
MLA
NLM
Tan, T. Y., Lee, S. T., & Gösele, U. (2002). Modeling growth directional features of silicon nanowires obtained using SiO. Materials Research Society Symposium - Proceedings, 719, 235–240. https://doi.org/10.1557/proc-719-f8.38
Tan, T. Y., S. T. Lee, and U. Gösele. “Modeling growth directional features of silicon nanowires obtained using SiO.” Materials Research Society Symposium - Proceedings 719 (January 1, 2002): 235–40. https://doi.org/10.1557/proc-719-f8.38.
Tan TY, Lee ST, Gösele U. Modeling growth directional features of silicon nanowires obtained using SiO. Materials Research Society Symposium - Proceedings. 2002 Jan 1;719:235–40.
Tan, T. Y., et al. “Modeling growth directional features of silicon nanowires obtained using SiO.” Materials Research Society Symposium - Proceedings, vol. 719, Jan. 2002, pp. 235–40. Scopus, doi:10.1557/proc-719-f8.38.
Tan TY, Lee ST, Gösele U. Modeling growth directional features of silicon nanowires obtained using SiO. Materials Research Society Symposium - Proceedings. 2002 Jan 1;719:235–240.
Published In
Materials Research Society Symposium - Proceedings
DOI
ISSN
0272-9172
Publication Date
January 1, 2002
Volume
719
Start / End Page
235 / 240