Fermi-level effect and junction carrier concentration effect on boron distribution in Ge^Si^/Si heterostructures
Publication
, Journal Article
Chen, CHO; Gösele, UM; Tan, TY
Published in: Materials Research Society Symposium - Proceedings
December 1, 1999
Dopant segregation mechanism in general involves the chemical effect, the Fermi-level effect, and the effect of the junction carrier concentrations. Satisfactory fits of available B distribution profiles in GexSij.x/Si heterostructures have been obtained using such a model, but with the chemical effect not important. The Fermi-level effect determines the difference in the ionized B solubilities in GexSii_x and Si. The singly-positively charged crystal self-interstitials I+ governs the boron diffusion process. The junction carrier concentration affects the concentration of I+ and solubility of B in the region and hence controls B diffusion across the heterojunction. © 1999 Materials Research Society.
Duke Scholars
Published In
Materials Research Society Symposium - Proceedings
ISSN
0272-9172
Publication Date
December 1, 1999
Volume
535
Start / End Page
275 / 280
Citation
APA
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ICMJE
MLA
NLM
Chen, C. H. O., Gösele, U. M., & Tan, T. Y. (1999). Fermi-level effect and junction carrier concentration effect on boron distribution in Ge^Si^/Si heterostructures. Materials Research Society Symposium - Proceedings, 535, 275–280.
Chen, C. H. O., U. M. Gösele, and T. Y. Tan. “Fermi-level effect and junction carrier concentration effect on boron distribution in Ge^Si^/Si heterostructures.” Materials Research Society Symposium - Proceedings 535 (December 1, 1999): 275–80.
Chen CHO, Gösele UM, Tan TY. Fermi-level effect and junction carrier concentration effect on boron distribution in Ge^Si^/Si heterostructures. Materials Research Society Symposium - Proceedings. 1999 Dec 1;535:275–80.
Chen, C. H. O., et al. “Fermi-level effect and junction carrier concentration effect on boron distribution in Ge^Si^/Si heterostructures.” Materials Research Society Symposium - Proceedings, vol. 535, Dec. 1999, pp. 275–80.
Chen CHO, Gösele UM, Tan TY. Fermi-level effect and junction carrier concentration effect on boron distribution in Ge^Si^/Si heterostructures. Materials Research Society Symposium - Proceedings. 1999 Dec 1;535:275–280.
Published In
Materials Research Society Symposium - Proceedings
ISSN
0272-9172
Publication Date
December 1, 1999
Volume
535
Start / End Page
275 / 280