Phosphorus and aluminum gettering of gold in silicon: simulation and optimization considerations

Using the diffusion-segregation equation, modeling and simulations of gettering Au (a substitutional-interstitial species in Si) away from the Si bulk have been performed. Three external gettering schemes have been considered: wafer frontside P indiffusion gettering, wafer backside Al deposition gettering, and a combination of the two processes. Under the same processing conditions, it has been shown that P indiffusion gettering is faster than Al gettering, but P gettering has a lower gettering capacity and is less stable than Al gettering for longer gettering times. The combined P and Al gettering process is as fast as P gettering in reaching an optimum gettered state, and possesses the capacity and stability of the Al gettering process.

Duke Scholars

Author Teh Yu Tan Thomas Lord Department of Mechanical Engineering and Materia ...