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Co-precipitation of carbon and oxygen in silicon: The dominant flux criterion

Publication ,  Journal Article
Taylor, WJ; Gosele, UM; Tan, TY
Published in: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
1993

Due to the need of relieving the strain associated with the formation of SiO2 precipitates in silicon, co-precipitation of carbon with oxygen in silicon wafers may involve a large number of atomic and point defect species: oxygen, carbon, vacancies, and silicon self-interstitials. This allows many parallel mechanisms for strain relief to occur. In the present paper we first reason that this complex system may be reduced to that involving only three species: oxygen, carbon, and self-interstitials; and the strain relief mechanisms may be limited to two: that via self-interstitials and that involving carbon. We then propose a dominant (strain relief species) flux criteria to explain the behavior of carbon and oxygen co-precipitation in silicon. When the carbon flux is dominant, carbon should co-precipitate with oxygen. When the silicon self-interstitial flux is dominant, carbon should not co-precipitate with oxygen, even at high concentrations. Available data, spanning the temperature range of 450-1000 °C and a carbon concentration range of from less than 0.5×1016 to 1×1018 cm-3, can be explained using this criterion.

Duke Scholars

Published In

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

ISSN

0021-4922

Publication Date

1993

Volume

32

Issue

11 A

Start / End Page

4857 / 4862

Related Subject Headings

  • Applied Physics
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences
 

Citation

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Taylor, W. J., Gosele, U. M., & Tan, T. Y. (1993). Co-precipitation of carbon and oxygen in silicon: The dominant flux criterion. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 32(11 A), 4857–4862.
Taylor, W. J., U. M. Gosele, and T. Y. Tan. “Co-precipitation of carbon and oxygen in silicon: The dominant flux criterion.” Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 32, no. 11 A (1993): 4857–62.
Taylor WJ, Gosele UM, Tan TY. Co-precipitation of carbon and oxygen in silicon: The dominant flux criterion. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1993;32(11 A):4857–62.
Taylor, W. J., et al. “Co-precipitation of carbon and oxygen in silicon: The dominant flux criterion.” Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 32, no. 11 A, 1993, pp. 4857–62.
Taylor WJ, Gosele UM, Tan TY. Co-precipitation of carbon and oxygen in silicon: The dominant flux criterion. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1993;32(11 A):4857–4862.
Journal cover image

Published In

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

ISSN

0021-4922

Publication Date

1993

Volume

32

Issue

11 A

Start / End Page

4857 / 4862

Related Subject Headings

  • Applied Physics
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences