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INFLUENCE OF POINT DEFECTS ON DIFFUSION AND GETTERING IN SILICON.

Publication ,  Journal Article
Goesele, U; Tan, TY
Published in: Materials Research Society Symposia Proceedings
December 1, 1985

In a first part, we deal with the influence of intrinsic point defects (vacancies and self-interstitials) on self- and impurity diffusion in silicon. Estimates of the diffusivities and thermal equilibrium concentrations of vacancies and self-interstitials are given. In a second part, we discuss the influence of point defects on the diffusion and percipitation of different types of metallic impurities in various gettering schemes as well as on the nucleation and growth of SiO//2 precipitates.

Duke Scholars

Published In

Materials Research Society Symposia Proceedings

ISSN

0272-9172

Publication Date

December 1, 1985

Volume

36

Start / End Page

105 / 116
 

Citation

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Goesele, U., & Tan, T. Y. (1985). INFLUENCE OF POINT DEFECTS ON DIFFUSION AND GETTERING IN SILICON. Materials Research Society Symposia Proceedings, 36, 105–116.
Goesele, U., and T. Y. Tan. “INFLUENCE OF POINT DEFECTS ON DIFFUSION AND GETTERING IN SILICON.Materials Research Society Symposia Proceedings 36 (December 1, 1985): 105–16.
Goesele U, Tan TY. INFLUENCE OF POINT DEFECTS ON DIFFUSION AND GETTERING IN SILICON. Materials Research Society Symposia Proceedings. 1985 Dec 1;36:105–16.
Goesele, U., and T. Y. Tan. “INFLUENCE OF POINT DEFECTS ON DIFFUSION AND GETTERING IN SILICON.Materials Research Society Symposia Proceedings, vol. 36, Dec. 1985, pp. 105–16.
Goesele U, Tan TY. INFLUENCE OF POINT DEFECTS ON DIFFUSION AND GETTERING IN SILICON. Materials Research Society Symposia Proceedings. 1985 Dec 1;36:105–116.

Published In

Materials Research Society Symposia Proceedings

ISSN

0272-9172

Publication Date

December 1, 1985

Volume

36

Start / End Page

105 / 116