On the nature of point defects and the effect of oxidation on substitutional dopant diffusion in silicon
Publication
, Journal Article
Tan, TY; Gösele, U; Morehead, FF
Published in: Applied Physics A Solids and Surfaces
June 1, 1983
An extensive analysis of the substitutional dopant diffusion phenomena in silicon during oxidation is presented. The analysis covers qualitative as well as quantitative aspects of the oxidation-enhanced and -retarded diffusion (OED and ORD) phenomena, and examines three different possible assumptions that can be made on the nature of the silicon thermal equilibrium point defect species: silicon self-interstitials (I) only, vacancies (V) only, coexistence of I and V. The only consistent way to interpret all properly documented OED/ORD data is to assume that I and V coexist under oxidation as well as under thermal equilibrium conditions at high temperatures. © 1983 Springer-Verlag.
Duke Scholars
Published In
Applied Physics A Solids and Surfaces
DOI
EISSN
1432-0630
ISSN
0721-7250
Publication Date
June 1, 1983
Volume
31
Issue
2
Start / End Page
97 / 108
Citation
APA
Chicago
ICMJE
MLA
NLM
Tan, T. Y., Gösele, U., & Morehead, F. F. (1983). On the nature of point defects and the effect of oxidation on substitutional dopant diffusion in silicon. Applied Physics A Solids and Surfaces, 31(2), 97–108. https://doi.org/10.1007/BF00616312
Tan, T. Y., U. Gösele, and F. F. Morehead. “On the nature of point defects and the effect of oxidation on substitutional dopant diffusion in silicon.” Applied Physics A Solids and Surfaces 31, no. 2 (June 1, 1983): 97–108. https://doi.org/10.1007/BF00616312.
Tan TY, Gösele U, Morehead FF. On the nature of point defects and the effect of oxidation on substitutional dopant diffusion in silicon. Applied Physics A Solids and Surfaces. 1983 Jun 1;31(2):97–108.
Tan, T. Y., et al. “On the nature of point defects and the effect of oxidation on substitutional dopant diffusion in silicon.” Applied Physics A Solids and Surfaces, vol. 31, no. 2, June 1983, pp. 97–108. Scopus, doi:10.1007/BF00616312.
Tan TY, Gösele U, Morehead FF. On the nature of point defects and the effect of oxidation on substitutional dopant diffusion in silicon. Applied Physics A Solids and Surfaces. 1983 Jun 1;31(2):97–108.
Published In
Applied Physics A Solids and Surfaces
DOI
EISSN
1432-0630
ISSN
0721-7250
Publication Date
June 1, 1983
Volume
31
Issue
2
Start / End Page
97 / 108