NATURE OF POINT DEFECTS AND THEIR INFLUENCE ON DIFFUSION PROCESSES IN SILICON AT HIGH TEMPERATURES.
Publication
, Journal Article
Goesele, U; Tan, TY
Published in: Materials Research Society Symposia Proceedings
January 1, 1983
Duke Scholars
Published In
Materials Research Society Symposia Proceedings
ISSN
0272-9172
Publication Date
January 1, 1983
Volume
14
Start / End Page
45 / 59
Citation
APA
Chicago
ICMJE
MLA
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Goesele, U., & Tan, T. Y. (1983). NATURE OF POINT DEFECTS AND THEIR INFLUENCE ON DIFFUSION PROCESSES IN SILICON AT HIGH TEMPERATURES. Materials Research Society Symposia Proceedings, 14, 45–59.
Goesele, U., and T. Y. Tan. “NATURE OF POINT DEFECTS AND THEIR INFLUENCE ON DIFFUSION PROCESSES IN SILICON AT HIGH TEMPERATURES.” Materials Research Society Symposia Proceedings 14 (January 1, 1983): 45–59.
Goesele U, Tan TY. NATURE OF POINT DEFECTS AND THEIR INFLUENCE ON DIFFUSION PROCESSES IN SILICON AT HIGH TEMPERATURES. Materials Research Society Symposia Proceedings. 1983 Jan 1;14:45–59.
Goesele, U., and T. Y. Tan. “NATURE OF POINT DEFECTS AND THEIR INFLUENCE ON DIFFUSION PROCESSES IN SILICON AT HIGH TEMPERATURES.” Materials Research Society Symposia Proceedings, vol. 14, Jan. 1983, pp. 45–59.
Goesele U, Tan TY. NATURE OF POINT DEFECTS AND THEIR INFLUENCE ON DIFFUSION PROCESSES IN SILICON AT HIGH TEMPERATURES. Materials Research Society Symposia Proceedings. 1983 Jan 1;14:45–59.
Published In
Materials Research Society Symposia Proceedings
ISSN
0272-9172
Publication Date
January 1, 1983
Volume
14
Start / End Page
45 / 59