UNDISSOCIATED DISLOCATIONS AND INTERMEDIATE DEFECTS IN As** plus ION DAMAGED SILICON.
Publication
, Journal Article
Foell, H; Tan, TY; Krakow, W
Published in: Mat Res Soc Symp Proc
December 1, 1981
Duke Scholars
Published In
Mat Res Soc Symp Proc
Publication Date
December 1, 1981
Volume
2
Start / End Page
173 / 177
Citation
APA
Chicago
ICMJE
MLA
NLM
Foell, H., Tan, T. Y., & Krakow, W. (1981). UNDISSOCIATED DISLOCATIONS AND INTERMEDIATE DEFECTS IN As** plus ION DAMAGED SILICON. Mat Res Soc Symp Proc, 2, 173–177.
Foell, H., T. Y. Tan, and W. Krakow. “UNDISSOCIATED DISLOCATIONS AND INTERMEDIATE DEFECTS IN As** plus ION DAMAGED SILICON.” Mat Res Soc Symp Proc 2 (December 1, 1981): 173–77.
Foell H, Tan TY, Krakow W. UNDISSOCIATED DISLOCATIONS AND INTERMEDIATE DEFECTS IN As** plus ION DAMAGED SILICON. Mat Res Soc Symp Proc. 1981 Dec 1;2:173–7.
Foell, H., et al. “UNDISSOCIATED DISLOCATIONS AND INTERMEDIATE DEFECTS IN As** plus ION DAMAGED SILICON.” Mat Res Soc Symp Proc, vol. 2, Dec. 1981, pp. 173–77.
Foell H, Tan TY, Krakow W. UNDISSOCIATED DISLOCATIONS AND INTERMEDIATE DEFECTS IN As** plus ION DAMAGED SILICON. Mat Res Soc Symp Proc. 1981 Dec 1;2:173–177.
Published In
Mat Res Soc Symp Proc
Publication Date
December 1, 1981
Volume
2
Start / End Page
173 / 177