Oriented Si and Ge nanocrystals formed in Al2 O3 by ion implantation and annealing
Publication
, Journal Article
White, CW; Budai, JD; Withrow, SP; Pennycook, SJ; Hembree, DM; Zhou, DS; Vo-Dinh, T; Magruder, RH
Published in: Materials Research Society Symposium Proceedings
January 1, 1994
Ion implantation followed by thermal annealing in a reducing atmosphere has been used to create a high density of oriented Si and Ge nanocrystals in (0001) Al2O3. Both types of nanocrystals are three-dimensionally aligned with respect to the Al2O3 matrix, but the orientational relationships are different, and the two types of nanocrystals have different shapes in Al2O3. Implantation of Si and Ge in fused silica also produces nanocrystals, but in this case, the nanocrystals are randomly oriented relative to each other.
Duke Scholars
Published In
Materials Research Society Symposium Proceedings
ISSN
0272-9172
Publication Date
January 1, 1994
Volume
316
Start / End Page
487 / 491
Citation
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White, C. W., Budai, J. D., Withrow, S. P., Pennycook, S. J., Hembree, D. M., Zhou, D. S., … Magruder, R. H. (1994). Oriented Si and Ge nanocrystals formed in Al2 O3 by ion implantation and annealing. Materials Research Society Symposium Proceedings, 316, 487–491.
White, C. W., J. D. Budai, S. P. Withrow, S. J. Pennycook, D. M. Hembree, D. S. Zhou, T. Vo-Dinh, and R. H. Magruder. “Oriented Si and Ge nanocrystals formed in Al2 O3 by ion implantation and annealing.” Materials Research Society Symposium Proceedings 316 (January 1, 1994): 487–91.
White CW, Budai JD, Withrow SP, Pennycook SJ, Hembree DM, Zhou DS, et al. Oriented Si and Ge nanocrystals formed in Al2 O3 by ion implantation and annealing. Materials Research Society Symposium Proceedings. 1994 Jan 1;316:487–91.
White, C. W., et al. “Oriented Si and Ge nanocrystals formed in Al2 O3 by ion implantation and annealing.” Materials Research Society Symposium Proceedings, vol. 316, Jan. 1994, pp. 487–91.
White CW, Budai JD, Withrow SP, Pennycook SJ, Hembree DM, Zhou DS, Vo-Dinh T, Magruder RH. Oriented Si and Ge nanocrystals formed in Al2 O3 by ion implantation and annealing. Materials Research Society Symposium Proceedings. 1994 Jan 1;316:487–491.
Published In
Materials Research Society Symposium Proceedings
ISSN
0272-9172
Publication Date
January 1, 1994
Volume
316
Start / End Page
487 / 491