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Wear-out and stress-induced leakage current of ultrathin gate oxides

Publication ,  Conference
Thees, HJ; Osburn, CM; Shiely, JP; Massoud, HZ
Published in: PHYSICS AND CHEMISTRY OF SIO(2) AND THE SI-SIO(2) INTERFACE-3, 1996
1996

Duke Scholars

Published In

PHYSICS AND CHEMISTRY OF SIO(2) AND THE SI-SIO(2) INTERFACE-3, 1996

ISBN

1-56677-151-X

Publication Date

1996

Volume

96

Issue

1

Start / End Page

677 / 686
 

Citation

APA
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ICMJE
MLA
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Thees, H. J., Osburn, C. M., Shiely, J. P., & Massoud, H. Z. (1996). Wear-out and stress-induced leakage current of ultrathin gate oxides. In PHYSICS AND CHEMISTRY OF SIO(2) AND THE SI-SIO(2) INTERFACE-3, 1996 (Vol. 96, pp. 677–686).
Thees, H. J., C. M. Osburn, J. P. Shiely, and H. Z. Massoud. “Wear-out and stress-induced leakage current of ultrathin gate oxides.” In PHYSICS AND CHEMISTRY OF SIO(2) AND THE SI-SIO(2) INTERFACE-3, 1996, 96:677–86, 1996.
Thees HJ, Osburn CM, Shiely JP, Massoud HZ. Wear-out and stress-induced leakage current of ultrathin gate oxides. In: PHYSICS AND CHEMISTRY OF SIO(2) AND THE SI-SIO(2) INTERFACE-3, 1996. 1996. p. 677–86.
Thees, H. J., et al. “Wear-out and stress-induced leakage current of ultrathin gate oxides.” PHYSICS AND CHEMISTRY OF SIO(2) AND THE SI-SIO(2) INTERFACE-3, 1996, vol. 96, no. 1, 1996, pp. 677–86.
Thees HJ, Osburn CM, Shiely JP, Massoud HZ. Wear-out and stress-induced leakage current of ultrathin gate oxides. PHYSICS AND CHEMISTRY OF SIO(2) AND THE SI-SIO(2) INTERFACE-3, 1996. 1996. p. 677–686.

Published In

PHYSICS AND CHEMISTRY OF SIO(2) AND THE SI-SIO(2) INTERFACE-3, 1996

ISBN

1-56677-151-X

Publication Date

1996

Volume

96

Issue

1

Start / End Page

677 / 686