Scholars@Duke publication: Electrical performance of stacked high-k gate dielectrics:: Remote plasma CVD Ta<sub>2</sub>O<sub>5</sub> and (Ta<sub>2</sub>O<sub>5</sub>)<sub>x</sub>(SiO<sub>2</sub>)<sub>1-x</sub> alloys with ultrathin plasma processed SiO<sub>2</sub> interface layers

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Electrical performance of stacked high-k gate dielectrics:: Remote plasma CVD Ta₂O₅ and (Ta₂O₅)_x(SiO₂)_1-x alloys with ultrathin plasma processed SiO₂ interface layers

Publication , Conference

Niimi, H; Johnson, RS; Lucovsky, G; Massoud, HZ

Published in: PHYSICS AND CHEMISTRY OF SIO2 AND THE SI-SIO2 INTERFACE - 4

2000

Duke Scholars

Author Hisham Z. Massoud Electrical and Computer Engineering

Published In

PHYSICS AND CHEMISTRY OF SIO2 AND THE SI-SIO2 INTERFACE - 4

ISBN

1-56677-267-2

Publication Date

2000

Volume

2000

Issue

2

Start / End Page

487 / 494

Citation

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Chicago

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MLA

NLM

Niimi, H., Johnson, R. S., Lucovsky, G., & Massoud, H. Z. (2000). Electrical performance of stacked high-k gate dielectrics:: Remote plasma CVD Ta₂O₅ and (Ta₂O₅)_x(SiO₂)_1-x alloys with ultrathin plasma processed SiO₂ interface layers. In PHYSICS AND CHEMISTRY OF SIO2 AND THE SI-SIO2 INTERFACE - 4 (Vol. 2000, pp. 487–494).

Niimi, H., R. S. Johnson, G. Lucovsky, and H. Z. Massoud. “Electrical performance of stacked high-k gate dielectrics:: Remote plasma CVD Ta₂O₅ and (Ta₂O₅)_x(SiO₂)_1-x alloys with ultrathin plasma processed SiO₂ interface layers.” In PHYSICS AND CHEMISTRY OF SIO2 AND THE SI-SIO2 INTERFACE - 4, 2000:487–94, 2000.

Niimi H, Johnson RS, Lucovsky G, Massoud HZ. Electrical performance of stacked high-k gate dielectrics:: Remote plasma CVD Ta₂O₅ and (Ta₂O₅)_x(SiO₂)_1-x alloys with ultrathin plasma processed SiO₂ interface layers. In: PHYSICS AND CHEMISTRY OF SIO2 AND THE SI-SIO2 INTERFACE - 4. 2000. p. 487–94.

Niimi, H., et al. “Electrical performance of stacked high-k gate dielectrics:: Remote plasma CVD Ta₂O₅ and (Ta₂O₅)_x(SiO₂)_1-x alloys with ultrathin plasma processed SiO₂ interface layers.” PHYSICS AND CHEMISTRY OF SIO2 AND THE SI-SIO2 INTERFACE - 4, vol. 2000, no. 2, 2000, pp. 487–94.

Niimi H, Johnson RS, Lucovsky G, Massoud HZ. Electrical performance of stacked high-k gate dielectrics:: Remote plasma CVD Ta₂O₅ and (Ta₂O₅)_x(SiO₂)_1-x alloys with ultrathin plasma processed SiO₂ interface layers. PHYSICS AND CHEMISTRY OF SIO2 AND THE SI-SIO2 INTERFACE - 4. 2000. p. 487–494.

Journal cover image

Published In

PHYSICS AND CHEMISTRY OF SIO2 AND THE SI-SIO2 INTERFACE - 4

ISBN

1-56677-267-2

Publication Date

2000

Volume

2000

Issue

2

Start / End Page

487 / 494