A simple model of the chemical nature of bonds at the Si-SiO2 interface and its influence on the electronic properties of MOS devices
Publication
, Conference
Massoud, HZ
Published in: FUNDAMENTAL ASPECTS OF ULTRATHIN DIELECTRICS ON SI-BASED DEVICES
January 1, 1998
Duke Scholars
Published In
FUNDAMENTAL ASPECTS OF ULTRATHIN DIELECTRICS ON SI-BASED DEVICES
ISBN
0-7923-5007-3
Publication Date
January 1, 1998
Volume
47
Start / End Page
103 / 116
Location
ST PETERSBURG, RUSSIA
Publisher
SPRINGER
Conference Name
NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices - Towards an Atomic Scale Understanding
Citation
APA
Chicago
ICMJE
MLA
NLM
Massoud, H. Z. (1998). A simple model of the chemical nature of bonds at the Si-SiO2 interface and its influence on the electronic properties of MOS devices. In E. Garfunkel, E. Gusev, & A. Vul (Eds.), FUNDAMENTAL ASPECTS OF ULTRATHIN DIELECTRICS ON SI-BASED DEVICES (Vol. 47, pp. 103–116). ST PETERSBURG, RUSSIA: SPRINGER.
Massoud, H. Z. “A simple model of the chemical nature of bonds at the Si-SiO2 interface and its influence on the electronic properties of MOS devices.” In FUNDAMENTAL ASPECTS OF ULTRATHIN DIELECTRICS ON SI-BASED DEVICES, edited by E. Garfunkel, E. Gusev, and A. Vul, 47:103–16. SPRINGER, 1998.
Massoud HZ. A simple model of the chemical nature of bonds at the Si-SiO2 interface and its influence on the electronic properties of MOS devices. In: Garfunkel E, Gusev E, Vul A, editors. FUNDAMENTAL ASPECTS OF ULTRATHIN DIELECTRICS ON SI-BASED DEVICES. SPRINGER; 1998. p. 103–16.
Massoud, H. Z. “A simple model of the chemical nature of bonds at the Si-SiO2 interface and its influence on the electronic properties of MOS devices.” FUNDAMENTAL ASPECTS OF ULTRATHIN DIELECTRICS ON SI-BASED DEVICES, edited by E. Garfunkel et al., vol. 47, SPRINGER, 1998, pp. 103–16.
Massoud HZ. A simple model of the chemical nature of bonds at the Si-SiO2 interface and its influence on the electronic properties of MOS devices. In: Garfunkel E, Gusev E, Vul A, editors. FUNDAMENTAL ASPECTS OF ULTRATHIN DIELECTRICS ON SI-BASED DEVICES. SPRINGER; 1998. p. 103–116.
Published In
FUNDAMENTAL ASPECTS OF ULTRATHIN DIELECTRICS ON SI-BASED DEVICES
ISBN
0-7923-5007-3
Publication Date
January 1, 1998
Volume
47
Start / End Page
103 / 116
Location
ST PETERSBURG, RUSSIA
Publisher
SPRINGER
Conference Name
NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices - Towards an Atomic Scale Understanding