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Point Defects and Diffusion in Semiconductors

Publication ,  Journal Article
GöSele, UM; Tan, TY
Published in: MRS Bulletin
January 1, 1991

Duke Scholars

Published In

MRS Bulletin

DOI

EISSN

1938-1425

ISSN

0883-7694

Publication Date

January 1, 1991

Volume

16

Issue

11

Start / End Page

42 / 46

Related Subject Headings

  • Applied Physics
  • 4018 Nanotechnology
  • 4016 Materials engineering
  • 0913 Mechanical Engineering
  • 0912 Materials Engineering
  • 0303 Macromolecular and Materials Chemistry
 

Citation

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ICMJE
MLA
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GöSele, U. M., & Tan, T. Y. (1991). Point Defects and Diffusion in Semiconductors. MRS Bulletin, 16(11), 42–46. https://doi.org/10.1557/S0883769400055512
GöSele, U. M., and T. Y. Tan. “Point Defects and Diffusion in Semiconductors.” MRS Bulletin 16, no. 11 (January 1, 1991): 42–46. https://doi.org/10.1557/S0883769400055512.
GöSele UM, Tan TY. Point Defects and Diffusion in Semiconductors. MRS Bulletin. 1991 Jan 1;16(11):42–6.
GöSele, U. M., and T. Y. Tan. “Point Defects and Diffusion in Semiconductors.” MRS Bulletin, vol. 16, no. 11, Jan. 1991, pp. 42–46. Scopus, doi:10.1557/S0883769400055512.
GöSele UM, Tan TY. Point Defects and Diffusion in Semiconductors. MRS Bulletin. 1991 Jan 1;16(11):42–46.

Published In

MRS Bulletin

DOI

EISSN

1938-1425

ISSN

0883-7694

Publication Date

January 1, 1991

Volume

16

Issue

11

Start / End Page

42 / 46

Related Subject Headings

  • Applied Physics
  • 4018 Nanotechnology
  • 4016 Materials engineering
  • 0913 Mechanical Engineering
  • 0912 Materials Engineering
  • 0303 Macromolecular and Materials Chemistry