Point Defects and Diffusion in Semiconductors
Publication
, Journal Article
GöSele, UM; Tan, TY
Published in: MRS Bulletin
January 1, 1991
Duke Scholars
Published In
MRS Bulletin
DOI
EISSN
1938-1425
ISSN
0883-7694
Publication Date
January 1, 1991
Volume
16
Issue
11
Start / End Page
42 / 46
Related Subject Headings
- Applied Physics
- 4018 Nanotechnology
- 4016 Materials engineering
- 0913 Mechanical Engineering
- 0912 Materials Engineering
- 0303 Macromolecular and Materials Chemistry
Citation
APA
Chicago
ICMJE
MLA
NLM
GöSele, U. M., & Tan, T. Y. (1991). Point Defects and Diffusion in Semiconductors. MRS Bulletin, 16(11), 42–46. https://doi.org/10.1557/S0883769400055512
GöSele, U. M., and T. Y. Tan. “Point Defects and Diffusion in Semiconductors.” MRS Bulletin 16, no. 11 (January 1, 1991): 42–46. https://doi.org/10.1557/S0883769400055512.
GöSele UM, Tan TY. Point Defects and Diffusion in Semiconductors. MRS Bulletin. 1991 Jan 1;16(11):42–6.
GöSele, U. M., and T. Y. Tan. “Point Defects and Diffusion in Semiconductors.” MRS Bulletin, vol. 16, no. 11, Jan. 1991, pp. 42–46. Scopus, doi:10.1557/S0883769400055512.
GöSele UM, Tan TY. Point Defects and Diffusion in Semiconductors. MRS Bulletin. 1991 Jan 1;16(11):42–46.
Published In
MRS Bulletin
DOI
EISSN
1938-1425
ISSN
0883-7694
Publication Date
January 1, 1991
Volume
16
Issue
11
Start / End Page
42 / 46
Related Subject Headings
- Applied Physics
- 4018 Nanotechnology
- 4016 Materials engineering
- 0913 Mechanical Engineering
- 0912 Materials Engineering
- 0303 Macromolecular and Materials Chemistry