The relationship between depth-resolved composition and strain relaxation in InAlN and InGaN films grown by molecular beam epitaxy
Publication
, Journal Article
Jiao, W; Kong, W; Li, J; Collar, K; Kim, TH; Brown, AS
Published in: Applied Physics Letters
October 14, 2013
A study of the relationship between strain and the incorporation of group III elements in ternary InGaN and InAlN grown by molecular beam epitaxy is reported. Using X-ray Photoelectron Spectroscopy compositional depth profiles with x-ray diffraction, we are able to find a clear relationship between strain and In incorporation including tensile-strained InAlN which has, to date, not been studied. The results show that fully strained films contain homogeneous indium composition while partially relaxed films have a non-homogeneous indium composition with depth. These results can be interpreted by considering the impurity formation energies of indium in host lattices. © 2013 AIP Publishing LLC.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
October 14, 2013
Volume
103
Issue
16
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
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Jiao, W., Kong, W., Li, J., Collar, K., Kim, T. H., & Brown, A. S. (2013). The relationship between depth-resolved composition and strain relaxation in InAlN and InGaN films grown by molecular beam epitaxy. Applied Physics Letters, 103(16). https://doi.org/10.1063/1.4825143
Jiao, W., W. Kong, J. Li, K. Collar, T. H. Kim, and A. S. Brown. “The relationship between depth-resolved composition and strain relaxation in InAlN and InGaN films grown by molecular beam epitaxy.” Applied Physics Letters 103, no. 16 (October 14, 2013). https://doi.org/10.1063/1.4825143.
Jiao W, Kong W, Li J, Collar K, Kim TH, Brown AS. The relationship between depth-resolved composition and strain relaxation in InAlN and InGaN films grown by molecular beam epitaxy. Applied Physics Letters. 2013 Oct 14;103(16).
Jiao, W., et al. “The relationship between depth-resolved composition and strain relaxation in InAlN and InGaN films grown by molecular beam epitaxy.” Applied Physics Letters, vol. 103, no. 16, Oct. 2013. Scopus, doi:10.1063/1.4825143.
Jiao W, Kong W, Li J, Collar K, Kim TH, Brown AS. The relationship between depth-resolved composition and strain relaxation in InAlN and InGaN films grown by molecular beam epitaxy. Applied Physics Letters. 2013 Oct 14;103(16).
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
October 14, 2013
Volume
103
Issue
16
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences