Doping effect on carrier occupation and transport in InAs/GaAs quantum dot infrared photodetectors: A capacitance-voltage spectroscopy study
Publication
, Journal Article
Zhao, Z; Lantz, KR; Yi, C; Stiff-Roberts, AD
Published in: Optics InfoBase Conference Papers
January 1, 2007
Impurity centers induced by dopants in InAs/GaAs quantum-dot systems affect energy level occupation and carrier transport in multi-layer QDIPs. In order to better understand doping effects and to optimize device performance, capacitance-voltage spectra are investigated. © 2007 Optical Society of America.
Duke Scholars
Published In
Optics InfoBase Conference Papers
EISSN
2162-2701
Publication Date
January 1, 2007
Citation
APA
Chicago
ICMJE
MLA
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Zhao, Z., Lantz, K. R., Yi, C., & Stiff-Roberts, A. D. (2007). Doping effect on carrier occupation and transport in InAs/GaAs quantum dot infrared photodetectors: A capacitance-voltage spectroscopy study. Optics InfoBase Conference Papers.
Zhao, Z., K. R. Lantz, C. Yi, and A. D. Stiff-Roberts. “Doping effect on carrier occupation and transport in InAs/GaAs quantum dot infrared photodetectors: A capacitance-voltage spectroscopy study.” Optics InfoBase Conference Papers, January 1, 2007.
Zhao Z, Lantz KR, Yi C, Stiff-Roberts AD. Doping effect on carrier occupation and transport in InAs/GaAs quantum dot infrared photodetectors: A capacitance-voltage spectroscopy study. Optics InfoBase Conference Papers. 2007 Jan 1;
Zhao, Z., et al. “Doping effect on carrier occupation and transport in InAs/GaAs quantum dot infrared photodetectors: A capacitance-voltage spectroscopy study.” Optics InfoBase Conference Papers, Jan. 2007.
Zhao Z, Lantz KR, Yi C, Stiff-Roberts AD. Doping effect on carrier occupation and transport in InAs/GaAs quantum dot infrared photodetectors: A capacitance-voltage spectroscopy study. Optics InfoBase Conference Papers. 2007 Jan 1;
Published In
Optics InfoBase Conference Papers
EISSN
2162-2701
Publication Date
January 1, 2007