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Toward surround gates on vertical single-walled carbon nanotube devices

Publication ,  Journal Article
Franklin, AD; Sayer, RA; Sands, TD; Fisher, TS; Janes, DB
Published in: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
April 20, 2009

The one-dimensional, cylindrical nature of single-walled carbon nanotubes (SWCNTs) suggests that the ideal gating geometry for nanotube field-effect transistors (FETs) is a surround gate (SG). Using vertical SWCNTs templated in porous anodic alumina, SGs are formed using top-down processes for the dielectric/metal depositions and definition of the channel length. Surround gates allow aggressive scaling of the channel to 25% of the length attainable with a bottom-gate geometry without incurring short-channel effects. The process demonstrated here for forming SGs on vertical SWCNTs is amenable for large-scale fabrication of multinanotube FETs. © 2009 American Vacuum Society.

Duke Scholars

Published In

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

DOI

ISSN

1071-1023

Publication Date

April 20, 2009

Volume

27

Issue

2

Start / End Page

821 / 826

Related Subject Headings

  • Applied Physics
  • 0912 Materials Engineering
  • 0901 Aerospace Engineering
  • 0401 Atmospheric Sciences
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Franklin, A. D., Sayer, R. A., Sands, T. D., Fisher, T. S., & Janes, D. B. (2009). Toward surround gates on vertical single-walled carbon nanotube devices. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 27(2), 821–826. https://doi.org/10.1116/1.3054266
Franklin, A. D., R. A. Sayer, T. D. Sands, T. S. Fisher, and D. B. Janes. “Toward surround gates on vertical single-walled carbon nanotube devices.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 27, no. 2 (April 20, 2009): 821–26. https://doi.org/10.1116/1.3054266.
Franklin AD, Sayer RA, Sands TD, Fisher TS, Janes DB. Toward surround gates on vertical single-walled carbon nanotube devices. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2009 Apr 20;27(2):821–6.
Franklin, A. D., et al. “Toward surround gates on vertical single-walled carbon nanotube devices.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 27, no. 2, Apr. 2009, pp. 821–26. Scopus, doi:10.1116/1.3054266.
Franklin AD, Sayer RA, Sands TD, Fisher TS, Janes DB. Toward surround gates on vertical single-walled carbon nanotube devices. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2009 Apr 20;27(2):821–826.

Published In

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

DOI

ISSN

1071-1023

Publication Date

April 20, 2009

Volume

27

Issue

2

Start / End Page

821 / 826

Related Subject Headings

  • Applied Physics
  • 0912 Materials Engineering
  • 0901 Aerospace Engineering
  • 0401 Atmospheric Sciences