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In-place fabrication of nanowire electrode arrays for vertical nanoelectronics on Si substrates

Publication ,  Journal Article
Franklin, AD; Maschmann, MR; DaSilva, M; Janes, DB; Fisher, TS; Sands, TD
Published in: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
April 8, 2007

Vertical arrays of Pd nanowire electrodes with controllable and reproducible diameters and lengths are fabricated using a porous anodic alumina (PAA) template supported on a metallized Si substrate. The process described here employs a hydrogen plasma to penetrate the alumina pore barrier oxide prior to electrodeposition, enabling direct electrical contact with the back electrode metallization, thereby eliminating the need for electrochemical processing with high current or voltage pulsing that can lead to delamination or voiding. Electrical characteristics reveal Ohmic contact between the Pd nanowires and the underlying Ti conductive layer for samples with a range of pore diameters from 30 to 130 nm. This process enables both the fabrication of vertical nanowire arrays on prefunctionalized substrates, as well as the in situ fabrication of contacts to semiconductor nanodevices using a thin-film nanowire array. The hydrogen plasma step is particularly well suited to the fabrication of carbon nanotube arrays in PAA by plasma-enhanced chemical vapor deposition. © 2007 American Vacuum Society.

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Published In

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

DOI

ISSN

1071-1023

Publication Date

April 8, 2007

Volume

25

Issue

2

Start / End Page

343 / 347

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0901 Aerospace Engineering
  • 0401 Atmospheric Sciences
 

Citation

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Chicago
ICMJE
MLA
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Franklin, A. D., Maschmann, M. R., DaSilva, M., Janes, D. B., Fisher, T. S., & Sands, T. D. (2007). In-place fabrication of nanowire electrode arrays for vertical nanoelectronics on Si substrates. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 25(2), 343–347. https://doi.org/10.1116/1.2647379
Franklin, A. D., M. R. Maschmann, M. DaSilva, D. B. Janes, T. S. Fisher, and T. D. Sands. “In-place fabrication of nanowire electrode arrays for vertical nanoelectronics on Si substrates.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 25, no. 2 (April 8, 2007): 343–47. https://doi.org/10.1116/1.2647379.
Franklin AD, Maschmann MR, DaSilva M, Janes DB, Fisher TS, Sands TD. In-place fabrication of nanowire electrode arrays for vertical nanoelectronics on Si substrates. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2007 Apr 8;25(2):343–7.
Franklin, A. D., et al. “In-place fabrication of nanowire electrode arrays for vertical nanoelectronics on Si substrates.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 25, no. 2, Apr. 2007, pp. 343–47. Scopus, doi:10.1116/1.2647379.
Franklin AD, Maschmann MR, DaSilva M, Janes DB, Fisher TS, Sands TD. In-place fabrication of nanowire electrode arrays for vertical nanoelectronics on Si substrates. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2007 Apr 8;25(2):343–347.

Published In

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

DOI

ISSN

1071-1023

Publication Date

April 8, 2007

Volume

25

Issue

2

Start / End Page

343 / 347

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0901 Aerospace Engineering
  • 0401 Atmospheric Sciences