Scalable and fully self-aligned n-type carbon nanotube transistors with gate-all-around
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Franklin, AD; Koswatta, SO; Farmer, D; Tulevski, GS; Smith, JT; Miyazoe, H; Haensch, W
Published in: Technical Digest - International Electron Devices Meeting, IEDM
December 1, 2012
While proven to provide high performance at sub-10 nm lengths, carbon nanotube (CNT) field-effect transistors (FETs) typically employ impractical gate geometries. Here we demonstrate fully self-aligned CNTFETs that include a gate-all-around (GAA) the nanotube channels-the ideal gate geometry for a 1D CNT. These GAA-CNTFETs have 30 nm channel lengths and exhibit n-type operation with high on-currents and good switching behavior that is explained by quantum transport (NEGF) simulations. This work is an important milestone showing that a technologically relevant self-aligned device can be realized with nanotubes. © 2012 IEEE.
Duke Scholars
Published In
Technical Digest - International Electron Devices Meeting, IEDM
DOI
ISSN
0163-1918
Publication Date
December 1, 2012
Citation
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Franklin, A. D., Koswatta, S. O., Farmer, D., Tulevski, G. S., Smith, J. T., Miyazoe, H., & Haensch, W. (2012). Scalable and fully self-aligned n-type carbon nanotube transistors with gate-all-around. In Technical Digest - International Electron Devices Meeting, IEDM. https://doi.org/10.1109/IEDM.2012.6478979
Franklin, A. D., S. O. Koswatta, D. Farmer, G. S. Tulevski, J. T. Smith, H. Miyazoe, and W. Haensch. “Scalable and fully self-aligned n-type carbon nanotube transistors with gate-all-around.” In Technical Digest - International Electron Devices Meeting, IEDM, 2012. https://doi.org/10.1109/IEDM.2012.6478979.
Franklin AD, Koswatta SO, Farmer D, Tulevski GS, Smith JT, Miyazoe H, et al. Scalable and fully self-aligned n-type carbon nanotube transistors with gate-all-around. In: Technical Digest - International Electron Devices Meeting, IEDM. 2012.
Franklin, A. D., et al. “Scalable and fully self-aligned n-type carbon nanotube transistors with gate-all-around.” Technical Digest - International Electron Devices Meeting, IEDM, 2012. Scopus, doi:10.1109/IEDM.2012.6478979.
Franklin AD, Koswatta SO, Farmer D, Tulevski GS, Smith JT, Miyazoe H, Haensch W. Scalable and fully self-aligned n-type carbon nanotube transistors with gate-all-around. Technical Digest - International Electron Devices Meeting, IEDM. 2012.
Published In
Technical Digest - International Electron Devices Meeting, IEDM
DOI
ISSN
0163-1918
Publication Date
December 1, 2012