Sub-10 nm carbon nanotube transistor
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, Conference
Franklin, AD; Han, SJ; Tulevski, GS; Luisier, M; Breslin, CM; Gignac, L; Lundstrom, MS; Haensch, W
Published in: Technical Digest International Electron Devices Meeting Iedm
December 1, 2011
This first demonstration of CNT transistors with channel lengths down to 9 nm shows substantially better scaling behavior than theoretically expected. Numerical simulations suggest that a possible explanation for the surprisingly good performance is a result of the gate modulating both the charge in the channel and in the contact regions. The unprecedented performance should ignite exciting new research into improving the purity and placement of nanotubes, as well as optimizing CNT transistor structure and integration. Results from aggressively scaling these molecular-channel transistors exhibit their strong suitability for a low-voltage, high-performance logic technology. © 2011 IEEE.
Duke Scholars
Published In
Technical Digest International Electron Devices Meeting Iedm
DOI
ISSN
0163-1918
Publication Date
December 1, 2011
Start / End Page
23.7.3
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Franklin, A. D., Han, S. J., Tulevski, G. S., Luisier, M., Breslin, C. M., Gignac, L., … Haensch, W. (2011). Sub-10 nm carbon nanotube transistor. In Technical Digest International Electron Devices Meeting Iedm (p. 23.7.3). https://doi.org/10.1109/IEDM.2011.6131600
Franklin, A. D., S. J. Han, G. S. Tulevski, M. Luisier, C. M. Breslin, L. Gignac, M. S. Lundstrom, and W. Haensch. “Sub-10 nm carbon nanotube transistor.” In Technical Digest International Electron Devices Meeting Iedm, 23.7.3, 2011. https://doi.org/10.1109/IEDM.2011.6131600.
Franklin AD, Han SJ, Tulevski GS, Luisier M, Breslin CM, Gignac L, et al. Sub-10 nm carbon nanotube transistor. In: Technical Digest International Electron Devices Meeting Iedm. 2011. p. 23.7.3.
Franklin, A. D., et al. “Sub-10 nm carbon nanotube transistor.” Technical Digest International Electron Devices Meeting Iedm, 2011, p. 23.7.3. Scopus, doi:10.1109/IEDM.2011.6131600.
Franklin AD, Han SJ, Tulevski GS, Luisier M, Breslin CM, Gignac L, Lundstrom MS, Haensch W. Sub-10 nm carbon nanotube transistor. Technical Digest International Electron Devices Meeting Iedm. 2011. p. 23.7.3.
Published In
Technical Digest International Electron Devices Meeting Iedm
DOI
ISSN
0163-1918
Publication Date
December 1, 2011
Start / End Page
23.7.3