High device yield carbon nanotube NFETs for high-performance logic applications
Publication
, Conference
Shahrjerdi, D; Franklin, AD; Oida, S; Tulevski, GS; Han, SJ; Hannon, JB; Haensch, W
Published in: Technical Digest - International Electron Devices Meeting, IEDM
December 1, 2011
We present the first analysis of device yield and material composition for several low work-function metal contacts to carbon nanotubes (CNT), including the first demonstration of high-performance n-channel field-effect transistors (NFET) from erbium (Er) and lanthanum (La). Our results indicate drastic improvement in NFET yield by appropriate metal selection and optimization of deposition conditions. © 2011 IEEE.
Duke Scholars
Published In
Technical Digest - International Electron Devices Meeting, IEDM
DOI
ISSN
0163-1918
Publication Date
December 1, 2011
Citation
APA
Chicago
ICMJE
MLA
NLM
Shahrjerdi, D., Franklin, A. D., Oida, S., Tulevski, G. S., Han, S. J., Hannon, J. B., & Haensch, W. (2011). High device yield carbon nanotube NFETs for high-performance logic applications. In Technical Digest - International Electron Devices Meeting, IEDM. https://doi.org/10.1109/IEDM.2011.6131596
Shahrjerdi, D., A. D. Franklin, S. Oida, G. S. Tulevski, S. J. Han, J. B. Hannon, and W. Haensch. “High device yield carbon nanotube NFETs for high-performance logic applications.” In Technical Digest - International Electron Devices Meeting, IEDM, 2011. https://doi.org/10.1109/IEDM.2011.6131596.
Shahrjerdi D, Franklin AD, Oida S, Tulevski GS, Han SJ, Hannon JB, et al. High device yield carbon nanotube NFETs for high-performance logic applications. In: Technical Digest - International Electron Devices Meeting, IEDM. 2011.
Shahrjerdi, D., et al. “High device yield carbon nanotube NFETs for high-performance logic applications.” Technical Digest - International Electron Devices Meeting, IEDM, 2011. Scopus, doi:10.1109/IEDM.2011.6131596.
Shahrjerdi D, Franklin AD, Oida S, Tulevski GS, Han SJ, Hannon JB, Haensch W. High device yield carbon nanotube NFETs for high-performance logic applications. Technical Digest - International Electron Devices Meeting, IEDM. 2011.
Published In
Technical Digest - International Electron Devices Meeting, IEDM
DOI
ISSN
0163-1918
Publication Date
December 1, 2011