Can carbon nanotube transistors be scaled without performance degradation?
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Franklin, AD; Tulevski, G; Hannon, JB; Chen, Z
Published in: Technical Digest - International Electron Devices Meeting, IEDM
December 1, 2009
The effects of channel length scaling on carbon nanotube field-effect transistor (CNTFET) performance was investigated by varying device lengths on the same nanotube. Results show that scaling improves performance with substantial increases in on-current, resistances closer to the quantum limit than have ever been reported, and the shortest (∼30 nm) well-behaving CNTFETs to date. © 2009 IEEE.
Duke Scholars
Published In
Technical Digest - International Electron Devices Meeting, IEDM
DOI
ISSN
0163-1918
Publication Date
December 1, 2009
Citation
APA
Chicago
ICMJE
MLA
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Franklin, A. D., Tulevski, G., Hannon, J. B., & Chen, Z. (2009). Can carbon nanotube transistors be scaled without performance degradation? In Technical Digest - International Electron Devices Meeting, IEDM. https://doi.org/10.1109/IEDM.2009.5424296
Franklin, A. D., G. Tulevski, J. B. Hannon, and Z. Chen. “Can carbon nanotube transistors be scaled without performance degradation?” In Technical Digest - International Electron Devices Meeting, IEDM, 2009. https://doi.org/10.1109/IEDM.2009.5424296.
Franklin AD, Tulevski G, Hannon JB, Chen Z. Can carbon nanotube transistors be scaled without performance degradation? In: Technical Digest - International Electron Devices Meeting, IEDM. 2009.
Franklin, A. D., et al. “Can carbon nanotube transistors be scaled without performance degradation?” Technical Digest - International Electron Devices Meeting, IEDM, 2009. Scopus, doi:10.1109/IEDM.2009.5424296.
Franklin AD, Tulevski G, Hannon JB, Chen Z. Can carbon nanotube transistors be scaled without performance degradation? Technical Digest - International Electron Devices Meeting, IEDM. 2009.
Published In
Technical Digest - International Electron Devices Meeting, IEDM
DOI
ISSN
0163-1918
Publication Date
December 1, 2009