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Epitaxial nucleation, growth and characterization of highly oriented, (100)-textured diamond films on silicon

Publication ,  Journal Article
Fox, BA; Stoner, BR; Malta, DM; Ellis, PJ; Glass, RC; Sivazlian, FR
Published in: Diamond and Related Materials
January 1, 1994

Growth of highly oriented, (100)-textured diamond films has been achieved through a multistep growth process which included biasenhanced nucleation and textured growth. The grain misorientation was analyzed by polar X-ray diffraction, electron diffraction and analysis of the dislocation spacing at a small-angle grain boundary. The electronic properties of simultaneously deposited, randomly oriented polycrystalline; highly oriented, (100) textured, and single-crystal homoepitaxial diamond films were compared to assess the role of grain boundaries. Calculations suggest that the highly oriented, (100)-textured film possessed a lower density of interfacial traps by about 50% compared with randomly oriented polycrystalline diamond film. This reduction in interfacial traps in the highly oriented, (100)-textured film could account for the mobility improvement by a factor of 3 over the mobility of the polycrystalline film. The homoepitaxial film possessed a mobility three times that of the highly oriented, (100)-textured film, and it appeared that additional reductions in trap density should provide additional opportunities for improved mobility in highly oriented, (100)-textured films. © 1994.

Duke Scholars

Published In

Diamond and Related Materials

DOI

ISSN

0925-9635

Publication Date

January 1, 1994

Volume

3

Issue

4-6

Start / End Page

382 / 387

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 4018 Nanotechnology
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0910 Manufacturing Engineering
  • 0904 Chemical Engineering
 

Citation

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Fox, B. A., Stoner, B. R., Malta, D. M., Ellis, P. J., Glass, R. C., & Sivazlian, F. R. (1994). Epitaxial nucleation, growth and characterization of highly oriented, (100)-textured diamond films on silicon. Diamond and Related Materials, 3(4–6), 382–387. https://doi.org/10.1016/0925-9635(94)90189-9
Fox, B. A., B. R. Stoner, D. M. Malta, P. J. Ellis, R. C. Glass, and F. R. Sivazlian. “Epitaxial nucleation, growth and characterization of highly oriented, (100)-textured diamond films on silicon.” Diamond and Related Materials 3, no. 4–6 (January 1, 1994): 382–87. https://doi.org/10.1016/0925-9635(94)90189-9.
Fox BA, Stoner BR, Malta DM, Ellis PJ, Glass RC, Sivazlian FR. Epitaxial nucleation, growth and characterization of highly oriented, (100)-textured diamond films on silicon. Diamond and Related Materials. 1994 Jan 1;3(4–6):382–7.
Fox, B. A., et al. “Epitaxial nucleation, growth and characterization of highly oriented, (100)-textured diamond films on silicon.” Diamond and Related Materials, vol. 3, no. 4–6, Jan. 1994, pp. 382–87. Scopus, doi:10.1016/0925-9635(94)90189-9.
Fox BA, Stoner BR, Malta DM, Ellis PJ, Glass RC, Sivazlian FR. Epitaxial nucleation, growth and characterization of highly oriented, (100)-textured diamond films on silicon. Diamond and Related Materials. 1994 Jan 1;3(4–6):382–387.
Journal cover image

Published In

Diamond and Related Materials

DOI

ISSN

0925-9635

Publication Date

January 1, 1994

Volume

3

Issue

4-6

Start / End Page

382 / 387

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 4018 Nanotechnology
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0910 Manufacturing Engineering
  • 0904 Chemical Engineering