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Highly oriented diamond films on Si: growth, characterization, and devices

Publication ,  Conference
Stoner, BR; Malta, DM; Tessmer, AJ; Holmes, J; Dreifus, DL; Glass, RC; Sowers, A; Nemanich, RJ
Published in: Proceedings of SPIE - The International Society for Optical Engineering
December 1, 1994

Highly oriented, (100) textured diamond films have been grown on single-crystal Si substrates via microwave plasma enhanced chemical vapor deposition. A multistep deposition process including bias-enhanced nucleation and textured growth was used to obtain smooth films consisting of epitaxial grains with only low-angle grain boundaries. Boron-doped layers were selectively deposited onto the surface of these oriented films and temperature-dependent Hall effect measurements indicated a 3 to 5 times improvement in hole mobility over polycrystalline films grown under similar conditions. Room temperature hole mobilities between 135 and 278 cm2/V-s were measured for the highly oriented samples as compared to 2 to 50 cm2/V-s for typical polycrystalline films. Grain size effects and a comparison between the transport properties of polycrystalline, highly oriented and homoepitaxial films will be discussed. Metal-oxide- semiconductor field-effect transistors were then fabricated on the highly oriented films and exhibited saturation and pinch-off of the channel current.

Duke Scholars

Published In

Proceedings of SPIE - The International Society for Optical Engineering

ISSN

0277-786X

Publication Date

December 1, 1994

Volume

2151

Start / End Page

2 / 13

Related Subject Headings

  • 5102 Atomic, molecular and optical physics
  • 4009 Electronics, sensors and digital hardware
  • 4006 Communications engineering
 

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Stoner, B. R., Malta, D. M., Tessmer, A. J., Holmes, J., Dreifus, D. L., Glass, R. C., … Nemanich, R. J. (1994). Highly oriented diamond films on Si: growth, characterization, and devices. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 2151, pp. 2–13).
Stoner, B. R., D. M. Malta, A. J. Tessmer, J. Holmes, D. L. Dreifus, R. C. Glass, A. Sowers, and R. J. Nemanich. “Highly oriented diamond films on Si: growth, characterization, and devices.” In Proceedings of SPIE - The International Society for Optical Engineering, 2151:2–13, 1994.
Stoner BR, Malta DM, Tessmer AJ, Holmes J, Dreifus DL, Glass RC, et al. Highly oriented diamond films on Si: growth, characterization, and devices. In: Proceedings of SPIE - The International Society for Optical Engineering. 1994. p. 2–13.
Stoner, B. R., et al. “Highly oriented diamond films on Si: growth, characterization, and devices.” Proceedings of SPIE - The International Society for Optical Engineering, vol. 2151, 1994, pp. 2–13.
Stoner BR, Malta DM, Tessmer AJ, Holmes J, Dreifus DL, Glass RC, Sowers A, Nemanich RJ. Highly oriented diamond films on Si: growth, characterization, and devices. Proceedings of SPIE - The International Society for Optical Engineering. 1994. p. 2–13.

Published In

Proceedings of SPIE - The International Society for Optical Engineering

ISSN

0277-786X

Publication Date

December 1, 1994

Volume

2151

Start / End Page

2 / 13

Related Subject Headings

  • 5102 Atomic, molecular and optical physics
  • 4009 Electronics, sensors and digital hardware
  • 4006 Communications engineering