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Comprehensive Semiconductor Science and Technology

Quantum-Dot Infrared Photodetectors

Publication ,  Chapter
Stiff-Roberts, AD
January 1, 2011

In this chapter, the device physics of quantum-dot infrared photodetectors (QDIPs) is reviewed, including epitaxial growth of quantum-dot (QD)-active regions, intraband transitions in QDs, and infrared photodetector performance parameters. Current QDIP research directions designed to address fundamental challenges in QDIPs, such as dot nonuniformity, are presented, including controlling dopant incorporation, bandgap engineering, and incorporating resonant photonic structures. Finally, the state-of-the-art performance of QDIP focal plane arrays and future research directions (such as organic-based QDIPs) are discussed.

Duke Scholars

DOI

Publication Date

January 1, 2011

Volume

1-6

Start / End Page

452 / 485
 

Citation

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Stiff-Roberts, A. D. (2011). Quantum-Dot Infrared Photodetectors. In Comprehensive Semiconductor Science and Technology (Vol. 1–6, pp. 452–485). https://doi.org/10.1016/B978-0-44-453153-7.00036-5
Stiff-Roberts, A. D. “Quantum-Dot Infrared Photodetectors.” In Comprehensive Semiconductor Science and Technology, 1–6:452–85, 2011. https://doi.org/10.1016/B978-0-44-453153-7.00036-5.
Stiff-Roberts AD. Quantum-Dot Infrared Photodetectors. In: Comprehensive Semiconductor Science and Technology. 2011. p. 452–85.
Stiff-Roberts, A. D. “Quantum-Dot Infrared Photodetectors.” Comprehensive Semiconductor Science and Technology, vol. 1–6, 2011, pp. 452–85. Scopus, doi:10.1016/B978-0-44-453153-7.00036-5.
Stiff-Roberts AD. Quantum-Dot Infrared Photodetectors. Comprehensive Semiconductor Science and Technology. 2011. p. 452–485.

DOI

Publication Date

January 1, 2011

Volume

1-6

Start / End Page

452 / 485