Proton induced leakage current in CCDs

The effect of different proton fluences on the performance of two E2V Technologies (formerly Marconi Applied Technologies, formerly EEV) CCD47-20 devices was investigated with particular emphasis given to the analysis of 'Random telegraph signal' (RTS) generation, bright pixel generation and induced changes in base dark current level. The results show that bright pixel frequency increases as the mean energy of the proton beam is increased, and that the base dark current level after irradiation scales with the level of ionisation damage. For the RTS study, 500 pixels on one device were monitored over a twelve hour period. This data set revealed a number of distinct types of pixel charge level fluctuation and a system of classification has been devised. Previously published RTS data is discussed and reviewed in light of the new data.

Duke Scholars

Author David R. Smith Electrical and Computer Engineering